PART |
Description |
Maker |
TPC8405 |
Field Effect Transistor Silicon N, P Channel MOS Type (P Channel U−MOS IV/N Channel U-MOS III)
|
Toshiba Semiconductor
|
2SJ541 |
Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
2SJ483 |
Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
MP6404 |
TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor]
|
HAT2215R-EL-E HAT2215R-15 |
3.4 A, 80 V, 0.145 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET Silicon N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
MP4703 |
POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE
|
ETC[ETC]
|
MP4410 |
POWER MOS FET MODULE SILICON N CHANNEL MOS TYPE
|
Toshiba Semiconductor
|
2SK1739A |
FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE RF POWER MOS FET for UHF TV BROADCAST TRANSMITTER
|
Toshiba Semiconductor
|
RJK0351DPA10 RJK0351DPA-00-J0 |
Silicon N Channel Power MOS FET Power Switching 40 A, 30 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, WPAK-8
|
Renesas Electronics Corporation
|
RJK0348DPA10 RJK0348DPA-00-J0 |
Silicon N Channel Power MOS FET Power Switching 50 A, 30 V, 0.0035 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, WPAK(2), 8 PIN
|
Renesas Electronics Corporation
|
RJK1212DNS-00-J5 |
Silicon N Channel Power MOS FET Power Switching 3 A, 120 V, 0.34 ohm, N-CHANNEL, Si, POWER, MOSFET 3.10 X 2.90 MM, HALOGEN AND LEAD FREE, PLASTIC, HWSON-8
|
Renesas Electronics Corporation
|