| PART |
Description |
Maker |
| CHA3092RBF CHA3092RBF_24 CHA3092RBF/24 |
20-33GHz Medium Power Amplifier
|
UMS[United Monolithic Semiconductors]
|
| CHA3092 CHA3092-99F_00 CHA3092-99F/00 |
Circular Connector; No. of Contacts:6; Series:TVS06; Body Material:Metal; Connecting Termination:Crimp; Connector Shell Size:23; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:23-6
20-33GHz Medium Power Amplifier
|
UMS[United Monolithic Semiconductors]
|
| KA22296 |
Playback / Recoder Pre Amplifie for Double Deck
|
SEC
|
| 2SA20881 2SB11321 2SB11841 2SB1198K1 2SB12601 2SB1 |
Medium power transistor (?60V, ?0.5A)
Medium Power Transistor (?32V,?1A)
Power Transistor (?60V, ?3A)
Low-frequency Transistor (-80V, -0.5A)
Power Transistor (?80V, ?1A)
Low VCE(sat) Transistor (?20V, ?3A)
Power transistor (?20V, ?2A)
General purpose amplification (?30V, ?1A)
Low frequency amplifier
Medium power transistor (−60V, −0.5A)
|
ROHM[Rohm]
|
| TGA1073A TGA1073A-SCC |
26- 34 GHz Medium Power Amplifier 26000 MHz - 35000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
|
TriQuint Semiconductor, Inc.
TRIQUINT[TriQuint Semiconductor]
|
| SBM52214X SBM52414Z SBM52214G SBM51214G SBM51214N |
Components and FTTx solutions - Tx 1310nm/Rx 1310nm, Medium Power
Medium Power BIDI Optical Standard Module 1310 nm Emitting, 1310 nm Receiving
Medium Power BIDI Optical Standard Module 1310 nm Emitting/ 1550 nm Receiving
Transceiver
Medium Power BIDI Optical Standard Module 1310 nm Emitting/ 1310 nm Receiving
中功率比迪光学标准模1310纳米发光，纳米接1310
|
INFINEON[Infineon Technologies AG]
|
| 2SC2411K 2SC1741S 2SC4097 |
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
Medium Power Transistor (32V, 0.5A)
Medium Power Transistor (32V 0.5A)
Medium Power Transistor (32V/ 0.5A)
|
ROHM[Rohm]
|
| CSA968A CSA968 CSA968B CSA968BO CSA968BY CSA968AY |
25.000W Medium Power PNP Plastic Leaded Transistor. 180V Vceo, 1.500A Ic, 70 - 140 hFE. Complementary CSC2238AO
25.000W Medium Power PNP Plastic Leaded Transistor. 180V Vceo, 1.500A Ic, 120 - 240 hFE. Complementary CSC2238AY
25.000W Medium Power PNP Plastic Leaded Transistor. 200V Vceo, 1.500A Ic, 120 - 240 hFE. Complementary CSC2238BY
25.000W Medium Power PNP Plastic Leaded Transistor. 200V Vceo, 1.500A Ic, 70 - 140 hFE. Complementary CSC2238BO
25.000W Medium Power PNP Plastic Leaded Transistor. 200V Vceo, 1.500A Ic, 70 - 240 hFE. Complementary CSC2238B
25.000W Medium Power PNP Plastic Leaded Transistor. 160V Vceo, 1.500A Ic, 70 - 240 hFE. Complementary CSC2238
PNP PLASTIC POWER TRANSISTORS
Single-Phase Filter; Filter Type:RFI; Current Rating:16A; Voltage Rating:250V; Capacitance:1uF; Inductance:0.6uH; Mounting Type:Flange; Series:FN2060; Terminal Type:Quick Connect RoHS Compliant: Yes
|
Continental Device India Limited
|
| BCP54 BCP54-16 BCP56-10 BCP56-16 BCP55-10 BCP55-16 |
NPN medium power transistors
TRANSISTOR MEDIUM POWER 晶体管中功率
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
Microchip Technology, Inc.
|
| BC51-16PA BC51-10PA BCP51-10 BC51PA |
45 V, 1A PNP medium power transistors 45伏，1安PNP型中等功率晶体管
Si, POWER TRANSISTOR
45 V, 1 A PNP medium power transistors
|
NXP Semiconductors N.V.
|
| 2SD882S-X-AA3-R 2SD882S-X-AB3-R 2SD882S-X-T92-B 2S |
MEDIUM POWER LOW VOLTAGE TRANSISTOR
MEDIUM POWER LOW VOLTAGE TRANSISTOR 3000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MEDIUM POWER LOW VOLTAGE TRANSISTOR 中功率低电压晶体
|
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UNISONIC TECHNOLOGIES CO LTD
Unisonic Technologies Co., Ltd.
友顺科技股份有限公司
UTC[Unisonic Technologies]
|
| LMA443 |
31GHz Medium Power Amplifier
31 GHz Medium Power Amplifier
|
FILTRONIC[Filtronic Compound Semiconductors]
|
