PART |
Description |
Maker |
LC35V1000BTS-70U LC35V1000BM LC35V1000BM-70U LC35V |
Asynchronous Silicon Gate 1M (131,072 words x8 bits) SRAM Static RAMs (1Mb) Asynchronous Silicon Gate 1M (131,072 words x 8 bits) SRAM
|
SANYO[Sanyo Semicon Device]
|
BS62LV4000 |
Asynchronous 4M(512Kx8) bits Static RAM
|
BSI
|
BS616UV1010 |
Asynchronous 1M(64Kx16) bits Static RAM
|
BSI
|
BS616UV4016 |
From old datasheet system Asynchronous 4M(256Kx16) bits Static RAM
|
Brilliance Semiconductor BSI
|
BS62LV8007 BS62LV8007ECG70 BS62LV8007FIG55 BS62LV8 |
Very Low Power/Voltage CMOS SRAM From old datasheet system Asynchronous 8M(1Mx8) bits Static RAM
|
Brilliance Semiconductor List of Unclassifed Manufacturers BSI ETC[ETC] Electronic Theatre Controls, Inc. List of Unclassifed Man...
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BS616LV1615 BS616LV1615FIP70 BS616LV1615FC BS616LV |
Very Low Power/Voltage CMOS SRAM 1M X 16 bit 非常低功电压CMOS SRAM00万16 Asynchronous 16M(1Mx16) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor]
|
BS616LV1013 BS616LV1013EIP70 BS616LV1013AC BS616LV |
Very Low Power/Voltage CMOS SRAM 64K X 16 bit 非常低功电压CMOS SRAM4K的16 Asynchronous 1M(64Kx16) bits Static RAM
|
Brilliance Semiconducto... BRILLIANCE SEMICONDUCTOR, Inc. BSI[Brilliance Semiconductor]
|
BS62LV4008 BS62LV4008TI BS62LV4008TC BS62LV4008STC |
From old datasheet system Asynchronous 4M(512Kx8) bits Static RAM Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8
|
BSI[Brilliance Semiconductor] BRILLIANCE SEMICONDUCTOR, INC. Brilliance Semiconducto...
|
TC58FVT160AXB-70 TC58FVB160AXB-70 TC58FVB160AFT-70 |
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16-MBIT (2M 8 BITS / 1M 16 BITS) CMOS FLASH MEMORY 16-MBIT (2Mx8 BITS/1Mx16 BITS) CMOS FLASH MEMORY
|
Toshiba Corporation
|
IDT72T51333 IDT72T51333L5BB IDT72T51333L5BB8 IDT72 |
2.5V MULTI-QUEUE FLOW-CONTROL DEVICES (4 QUEUES) 36 BIT WIDE CONFIGURATION 589,824 bits, 1,179,648 bits and 2,359,296 bits 8Q x18 512K Multi-Queue, 2.5V
|
Integrated Device Technolog... IDT
|
TC58FVM7T2AFT65 TC58FVM7B2 TC58FVM7B2AFT TC58FVM7B |
128-MBIT (16M X 8 BITS / 8M X 16 BITS) CMOS FLASH MEMORY
|
TOSHIBA[Toshiba Semiconductor]
|
EDX5116ABSE-4C-E EDX5116ABSE EDX5116ABSE-2A-E EDX5 |
512M bits XDR DRAM (32M words x16 bits)
|
ELPIDA[Elpida Memory]
|