| PART |
Description |
Maker |
| BLF900S-110 BLF900-110 |
Base station LDMOS transistors UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BLF7G27L-90P BLF7G27LS-90P |
90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
Power LDMOS transistor
|
NXP Semiconductors N.V.
|
| BLF6G22S-45112 |
Product description45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Power LDMOS transistor BLF6G22S-45<SOT608B (CDFM2)|<<http://www.nxp.com/packages/SOT608B.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
| SD4590 |
800-960 MHZ CELLULAR BASE STATION RF POWER TRANSISTORS
|
ST Microelectronics
|
| SD1423 |
800-960MHZ BASE STATION APPLICATIONS RF & MICROWAVE TRANSISTORS
|
ST Microelectronics
|
| SD4701 2872 |
RF & MICROWAVE TRANSISTORS CELLULAR BASE STATION APPLICATIONS
From old datasheet system
|
ST Microelectronics
STMicroelectronics
|
| SD4590 |
RF POWER TRANSISTORS 800-960 MHz CELLULAR BASE STATION
|
New Jersey Semi-Conduct...
|
| 820-IF70.0M-R |
Base Station & Repeater
|
Oscilent Corporation
|
| 813-IF140.0M-H |
Base Station & Repeater
|
Oscilent Corporation
|
| 838-IF75.0M-E |
Base Station & Repeater
|
Oscilent Corporation
|
