PART |
Description |
Maker |
F30D60 F30D30 F30D40 F30D50 |
POWER RECTIFIERS(30A/300-600V) POWER RECTIFIERS(30A,300-600V)
|
MOSPEC[Mospec Semiconductor]
|
U20D60 U20D30 U20D40 U20D50 |
POWER RECTIFIERS(20A/300-600V) POWER RECTIFIERS(20A,300-600V)
|
MOSPEC[Mospec Semiconductor]
|
H08A60 H08A30 H08A40 H08A50 |
HIGH EFFICIENCY RECTIFIERS(8A/300-600V) HIGH EFFICIENCY RECTIFIERS(8A,300-600V)
|
MOSPEC[Mospec Semiconductor]
|
IRFBC30AS IRFBC30L IRFBC30AL IRFBC30ASTRL IRFBC30A |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 600V Single N-Channel HEXFET Power MOSFET in a TO-262 package HEXFET? Power MOSFET Power MOSFET(Vdss=600V/ Rds(on)max=2.2ohm/ Id=3.6A) 600V,3.6A,N-Channel HEXFET Power MOSFET for SMPS(600V,3.6A,N沟道 HEXFET 功率MOS场效应管,用于开关模式电 Power MOSFET(Vdss=600V, Rds(on)max=2.2ohm, Id=3.6A) 功率MOSFET(减振钢板基本\u003d 600V电压的Rds(on)最大值\u003d 2.2ohm,身份证\u003d 3.6A
|
IRF[International Rectifier] International Rectifier, Corp.
|
IRFIBC40GLC IRFIBC40GLCPBF |
600V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=3.5A)
|
IRF[International Rectifier]
|
APT30M70SVRG APT30M70BVRG |
Power MOSFET; Package: D3 [S]; ID (A): 48; RDS(on) (Ohms): 0.07; BVDSS (V): 300; 48 A, 300 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET Power MOSFET; Package: TO-247 [B]; ID (A): 48; RDS(on) (Ohms): 0.07; BVDSS (V): 300; 48 A, 300 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
Microsemi, Corp.
|
PHMB300A6 |
IGBT MODULE Single 300A 600V 300 A, 600 V, N-CHANNEL IGBT
|
Nihon Inter Electronics, Corp. NIEC[Nihon Inter Electronics Corporation]
|
ARF466FL ARF466FL10 |
RF MOSFET for 100-300 Volt Operation; P(out) (W): 300; fO (MHz): 45; VDD (V): 200; BVDSS (V): 1000; RqJC (ºC/Watt): 0.27; Case Style: T2; COO: A-E VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET RF POWER MOSFETs N-CHANNEL ENHANCEMENT MODE
|
Microsemi, Corp. Microsemi Corporation
|
IRFBC40AS IRFBC40ASTRL IRFBC40ASTRR |
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=600V, Rds(on)max=1.2ohm, Id=6.2A) 功率MOSFET(减振钢板基本\u003d 600V电压的Rds(on)最大值\u003d 1.2ohm,身份证\u003d 6.2A
|
IRF[International Rectifier] International Rectifier, Corp.
|
SSU2N60B SSR2N60B SSR2N60 SSU2N60BTU SSR2N60BTF SS |
600V N-Channel MOSFET 600V N-Channel MOSFET 1.8 A, 600 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 600V N-Channel B-FET / Substitute of SSU2N60A 600V N-Channel B-FET / Substitute of SSR2N60A
|
Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
|