| PART |
Description |
Maker |
| FDFMA2P85308 FDFMA2P853 |
-20V Integrated P-Channel PowerTrenchMOSFET and Schottky Diode
Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode
Integrated P-Channel PowerTrench庐 MOSFET and Schottky Diode
Integrated P-Channel PowerTrench? MOSFET and Schottky Diode
|
Fairchild Semiconductor
|
| ADUM6200 ADUM6201 |
Dual-Channel, 5 <span style="text-transform: lowercase">k</span>V Isolators with Integrated DC/DC Converter (2/0 channel directionality)
Dual-Channel, 5 kV Isolators with Integrated DC/DC Converter (1/1 channel directionality)
|
Analog Devices
|
| BF1009S Q62702-F1628 Q62702-C2595 Q62702-C2607 Q62 |
NPN Silicon AF Transistors (For AF driver and output stages High collector current)
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| MASW-002102-13580 MASW-002102-13580G MASW-003102-1 |
2000 MHz - 18000 MHz RF/MICROWAVE SGL POLE DOUBLE THROW SWITCH, 1.8 dB INSERTION LOSS
HMIC Silicon PIN Diode Switches with Integrated Bias Network
HMIC?/a> Silicon PIN Diode Switches with Integrated Bias Network
HMIC垄芒 Silicon PIN Diode Switches with Integrated Bias Network
|
M/A-COM Technology Solutions, Inc.
|
| BF1005 Q62702-F1498 SIEMENSAG-Q62702-F1498 |
Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| MIG25Q806H |
Integrated IGBT Module Silicon N-Channel IGBT
|
Toshiba
|
| MIG50J906E |
Integrated IGBT Module Silicon N-Channel IGBT
|
Toshiba
|
| BF1012S Q62702-F1627 |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
