| PART |
Description |
Maker |
| K7A801809B K7A803609B K7A803609B06 |
256Kx36 & 512Kx18 Synchronous SRAM
|
Samsung semiconductor
|
| K7P803666B K7P801866B |
256Kx36 AND 512Kx18 Synchronous Pipelined SRAM
|
SAMSUNG[Samsung semiconductor]
|
| K7P801811M K7P803611M |
256Kx36 & 512Kx18 Synchronous Pipelined SRAM Data Sheet
|
Samsung Electronic
|
| K7P803611M-H21 K7P801811M K7P801811M-H20 K7P801811 |
256Kx36 & 512Kx18 SRAM
|
SAMSUNG[Samsung semiconductor]
|
| K7N801845B |
256Kx36 & 512Kx18 Pipelined NtRAM
|
Samsung semiconductor
|
| KM736V887 |
256Kx36 Synchronous SRAM(256Kx36位同步静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM736V890 |
256Kx36 Synchronous SRAM(256Kx36位同步静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K7A803601A K7A801801A |
256Kx36Bit Synchronous Pipelined Burst SRAM Data Sheet
512Kx18-Bit Synchronous Pipelined Burst SRAM Data Sheet
|
Samsung Electronic
|
| K7N801809A |
512Kx18-Bit Pipelined NtRAMData Sheet
|
Samsung Electronic
|
| HYB39S16400AT-10 HYB39S16400AT-8 Q67100-Q1333 Q671 |
16 MBit Synchronous DRAM 4M X 4 SYNCHRONOUS DRAM, 8 ns, PDSO44
16 MBit Synchronous DRAM 2M X 8 SYNCHRONOUS DRAM, 10 ns, PDSO44
Multipole Connector 1M X 16 SYNCHRONOUS DRAM, 10 ns, PDSO50
DB25PH 16兆位同步DRAM
16 MBit Synchronous DRAM 16兆位同步DRAM
|
Siemens Semiconductor Group
SIEMENS AG
|
| HIP5015 HIP5015IS HIP5015IS1 HIP5016 HIP5016IS HIP |
7V, 7A SynchroFET?/a> Complementary Drive Synchronous Half-Bridge
7V/ 7A SynchroFET Complementary Drive Synchronous Half-Bridge
7V, 7A SynchroFET Complementary Drive Synchronous Half-Bridge
From old datasheet system
7V, 7A SynchroFET⑩ Complementary Drive Synchronous Half-Bridge
FPGA - 1000000 SYSTEM GATE 2.5 VOLT - NOT RECOMMENDED for NEW DESIGN
Synchronous Half-Bridge Driver(同步半桥驱动 同步半桥驱动器（同步半桥驱动器）
7V, 7A SynchroFETComplementary Drive Synchronous Half-Bridge 7 A HB BASED PRPHL DRVR WITH PWM, PSFM7
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
