PART |
Description |
Maker |
K7N803601B K7N803649B-QC25 DS_K7N803601B K7M801825 |
512Kx36 & 1Mx18 Pipelined NtRAM 256Kx36 & 512Kx18-Bit Flow Through NtRAM 256Kx36 & 512Kx18-Bit Pipelined NtRAMTM THERMISTOR, NTC; Series:B572; Thermistor type:NTC; Resistance:5R; Tolerance, resistance:20%; Beta value:2800; Temperature, lower limit, beta value:25(degree C); Temperature, upper limit, beta value:100(degree C); Case RoHS Compliant: Yes 256Kx36 & 512Kx18-Bit Pipelined NtRAM 256Kx36
|
http:// Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
K7A803601M K7A801801M K7A801809B K7A803609B |
256Kx36 & 512Kx18 Synchronous SRAM 256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM 256K x 36 & 512K x 18-Bit Synchronous Pipelined Burst SRAM Data Sheet
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
K7B801825B |
256Kx36 & 512Kx18-Bit Synchronous Burst SRAM
|
Samsung Electronic
|
K7P801811M-H20 K7P801811M-H21 K7P801811M-H25 K7P80 |
256Kx36 & 512Kx18 SRAM 256Kx36 & 512Kx18 SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
K7M801825B K7M803625B06 |
256Kx36 & 512Kx18 Flow-Through NtRAM
|
Samsung semiconductor
|
K7N801849B K7N803649B |
256Kx36 & 512Kx18 Pipelined NtRAM
|
Samsung semiconductor
|
K7N801845B |
256Kx36 & 512Kx18 Pipelined NtRAM
|
Samsung semiconductor
|
K7B803625M K7B801825M |
256Kx36 & 512Kx18 Synchronous SRAM
|
SAMSUNG[Samsung semiconductor]
|
K7A803609A K7A801809A |
256Kx36Bit Synchronous Pipelined Burst SRAM Data Sheet 512Kx18-Bit Synchronous Pipelined Burst SRAM Data Sheet
|
Samsung Electronic
|
M410000027 M410000022 M41000001Z M41000001W |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM 32兆位个M × 8 2米x 16位).0伏的CMOS只,同时作业闪存兆位12亩x 8-Bit/256亩x 16位),静态存储器
|
Advanced Micro Devices, Inc.
|