| PART |
Description |
Maker |
| FCH25N60N |
N-Channel SupreMOSMOSFET 600V, 25A, 126m
|
Fairchild Semiconductor
|
| IRG4PC40K |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)
|
IRF[International Rectifier]
|
| P101 P124 P121 P103 P135K P100 P101K P101KW P101W |
1200V 25A 2 SCR Lateral Bridge in a PACE-Pak package
1000V 25A 2 SCR Lateral Bridge with Voltage Suppression in a PACE-Pak package
1000V 25A 2 SCR Lateral Bridge in a PACE-Pak package
800V 25A 2 SCR Lateral Bridge with Voltage Suppression in a PACE-Pak package
800V 25A 2 SCR Lateral Bridge in a PACE-Pak package
600V 25A 2 SCR Lateral Bridge with Voltage Suppression in a PACE-Pak package
600V 25A 2 SCR Lateral Bridge in a PACE-Pak package
400V 25A 2 SCR Lateral Bridge with Voltage Suppression in a PACE-Pak package
400V 25A 2 SCR Lateral Bridge in a PACE-Pak package
1200V 25A 2 SCR Traverse Bridge with Free Wheeling Diode in a PACE-Pak package
1200V 25A 2 SCR Traverse Bridge with Voltage Suppression and Free Wheeling Diode in a PACE-Pak package
1200V 25A 2 SCR Traverse Bridge with Voltage Suppression in a PACE-Pak package
1200V 25A 2 SCR Traverse Bridge in a PACE-Pak package
1000V 25A 2 SCR Traverse Bridge with Free Wheeling Diode in a PACE-Pak package
1000V 25A 2 SCR Traverse Bridge with Voltage Suppression and Free Wheeling Diode in a PACE-Pak package
1000V 25A 2 SCR Traverse Bridge with Voltage Suppression in a PACE-Pak package
1000V 25A 2 SCR Traverse Bridge in a PACE-Pak package
800V 25A 2 SCR Traverse Bridge with Free Wheeling Diode in a PACE-Pak package
800V 25A 2 SCR Traverse Bridge with Voltage Suppression and Free Wheeling Diode in a PACE-Pak package
800V 25A 2 SCR Traverse Bridge with Voltage Suppression in a PACE-Pak package
800V 25A 2 SCR Traverse Bridge in a PACE-Pak package
600V 25A 2 SCR Traverse Bridge with Free Wheeling Diode in a PACE-Pak package
600V 25A 2 SCR Traverse Bridge with Voltage Suppression and Free Wheeling Diode in a PACE-Pak package
600V 25A 2 SCR Traverse Bridge with Voltage Suppression in a PACE-Pak package
600V 25A 2 SCR Traverse Bridge in a PACE-Pak package
400V 25A 2 SCR Traverse Bridge with Free Wheeling Diode in a PACE-Pak package
400V 25A 2 SCR Traverse Bridge with Voltage Suppression and Free Wheeling Diode in a PACE-Pak package
400V 25A 2 SCR Traverse Bridge with Voltage Suppression in a PACE-Pak package
400V 25A 2 SCR Traverse Bridge in a PACE-Pak package
From old datasheet system
PASSIVATED ASSEMBLED CIRCUIT ELEMENTS
GT 3C 3#16S PIN RECP BOX RM
|
IRF[International Rectifier]
|
| 20CTQ150TRRPBF 20CTQ150 20CTQ150-1 20CTQ150-1PBF 2 |
SCHOTTKYRECTIFIER
SSR IO 230V 25A 4.5-32 VDC LED
SSR ZS 600V 25A 4.5-32 VDC LED RoHS Compliant: Yes
SCHOTTKY RECTIFIER 肖特基整流器
|
IRF[International Rectifier]
InternationalRectifier
Vishay Semiconductors
International Rectifier, Corp.
|
| B25H2S60KL B25H2S20KL B25H2S40KL B25H2S10KL B25H2S |
THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|600V V(RRM)|25A I(T)
THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|200V V(RRM)|25A I(T)
THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|400V V(RRM)|25A I(T)
THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|100V V(RRM)|25A I(T)
THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|1.2KV V(RRM)|25A I(T)
THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|1KV V(RRM)|25A I(T) 晶闸管模块|可控硅|双|独立| 1KV交五（无线资源管理）|5A我（翻译
|
SCHURTER AG
|
| APT6025BVR |
POWER MOS V 600V 25A 0.250 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| SSU2N60B SSR2N60B SSR2N60 SSU2N60BTU SSR2N60BTF SS |
600V N-Channel MOSFET
600V N-Channel MOSFET 1.8 A, 600 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
600V N-Channel B-FET / Substitute of SSU2N60A
600V N-Channel B-FET / Substitute of SSR2N60A
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| 100JB12L 35MB100A 35MB10A 35MB120A 100JB10L 100JB1 |
10 to 35 Amp Rectifier Bridges
V(rrm): 400V; 25A rectifier bridge
V(rrm): 1200V; 35A rectifier bridge
V(rrm): 100V; 25A rectifier bridge
V(rrm): 1000V; 25A rectifier bridge
V(rrm): 1000V; 10A rectifier bridge
V(rrm): 100V; 10A rectifier bridge
V(rrm): 400V; 10A rectifier bridge
V(rrm): 1200V; 10A rectifier bridge
V(rrm): 50V; 10A rectifier bridge
V(rrm): 200V; 10A rectifier bridge
V(rrm): 600V; 10A rectifier bridge
V(rrm): 800V; 10A rectifier bridge
V(rrm): 1200V; 25A rectifier bridge
V(rrm): 1000V; 35A rectifier bridge
V(rrm): 50V; 25A rectifier bridge
V(rrm): 600V; 25A rectifier bridge
|
IRF[International Rectifier]
|
| STB3NC60 STB3NC60T4 STB3NC60-1 |
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A I(D) | TO-262AA
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A I(D) | TO-263AB
N - CHANNEL 600V - 3.3Ohm -3A-D 2 PAK/I 2 PAK PowerMESH II MOSFET
N - CHANNEL 600V - 3.3ohm- 3A - D2PAK/I2PAK PowerMESHII MOSFET
|
SGS Thomson Microelectronics
STMicroelectronics
意法半导
|
| IRFP443R IRFF430R IRF731R IRF732R IRFP442R IRFP342 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 13A I(D) | TO-204AA
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 500MA I(D) | TO-250VAR
Rugged Series Power MOSFETs - N-Channel
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2.75A I(D) | TO-205AF
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 5.5A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 4.5A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 7.7A I(D) | TO-247
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 8.7A I(D) | TO-247AC
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 10A I(D) | TO-204AA
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3.3A I(D) | TO-220AB
TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 5.5A I(D) | TO-204AA
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 4.5A I(D) | TO-204AA
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 4.5A I(D) | TO-204AA
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 6.8A I(D) | TO-247 晶体管| MOSFET的| N沟道| 600V的五（巴西）直| 6.8AI（四）|47
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 5.4A I(D) | TO-204AA 晶体管| MOSFET的| N沟道| 600V的五（巴西）直| 5.4AI（四）|04AA
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 4A I(D) | TO-220AB 晶体管| MOSFET的| N沟道| 500V五（巴西）直| 4A条（丁）| TO - 220AB现有
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 2.25A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 450V五（巴西）直| 2.25AI（四）|05AF
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 1.35A I(D) | TO-205AF 晶体管| MOSFET的| N沟道| 400V五（巴西）直| 1.35AI（四）|05AF
TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 4A I(D) | TO-204AA
|
International Rectifier, Corp.
Intersil, Corp.
Infineon Technologies AG
Fairchild Semiconductor, Corp.
|
| FQP2N60C FQPF2N60C |
600V N-Channel Advance Q-FET C-Series
600V N-Channel MOSFET
|
FAIRCHILD[Fairchild Semiconductor]
|
| FCH20N60NBSP FCA20N60NBSP FCH20N60 FCA20N60 |
600V N-Channel SuperFET
600V N-Channel MOSFET
From old datasheet system
|
Fairchild Semiconductor
|
