PART |
Description |
Maker |
FCI25N60NF102 FCI25N60N |
N-Channel SupreMOSMOSFET 600V, 25A, 125m N-Channel SupreMOS? MOSFET 600 V, 25 A, 125 mΩ
|
Fairchild Semiconductor
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20CTQ150TRRPBF 20CTQ150 20CTQ150-1 20CTQ150-1PBF 2 |
SCHOTTKYRECTIFIER SSR IO 230V 25A 4.5-32 VDC LED SSR ZS 600V 25A 4.5-32 VDC LED RoHS Compliant: Yes SCHOTTKY RECTIFIER 肖特基整流器
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IRF[International Rectifier] InternationalRectifier Vishay Semiconductors International Rectifier, Corp.
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B25JS60K B25JS60KL B25CS40KL B25CS40DL B25DC60DL B |
THYRISTOR MODULE|SCR|DUAL|CC|400V V(RRM)|25A I(T) THYRISTOR MODULE|DOUBLER|HALF-CNTLD|NEGATIVE|600V V(RRM)|25A I(T) 晶闸管模块|倍增|半CNTLD |负| 600V的五(无线资源管理)|5A我(翻译 Metal Oxide Resistor - RS 2 1K 5% W 晶闸管模块|倍增|半CNTLD |阳性| 1KV交五(无线资源管理)|5A我(翻译 THYRISTOR MODULE|SCR|DUAL|CA|400V V(RRM)|25A I(T) 晶闸管模块|可控硅|双|加利福尼亚州| 400V五(无线资源管理)|5A我(翻译 THYRISTOR MODULE|SCR|DUAL|CA|600V V(RRM)|25A I(T) 晶闸管模块|可控硅|双|加利福尼亚州| 600V的五(无线资源管理)|5A我(翻译 THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1.2KV V(RRM)|25A I(T) 晶闸管模块|倍增|半CNTLD |阳性| 1.2KV五(无线资源管理)|5A我(翻译 THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|600V V(RRM)|25A I(T) 晶闸管模块|倍增|半CNTLD |阳性| 600V的五(无线资源管理)|5A我(翻译 THYRISTOR MODULE|DOUBLER|HALF-CNTLD|POSITIVE|1KV V(RRM)|25A I(T) 晶闸管模块|倍增|半CNTLD |阳性| 1KV交五(无线资源管理)|5A我(翻译
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Vishay Intertechnology, Inc. Cornell Dubilier Electronics, Inc. Allegro MicroSystems, Inc. Atmel, Corp. NXP Semiconductors N.V.
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Q6025G Q6025J6 Q6025K6 Q6025L5 Q6025L6 Q6025L9ALT |
TRIAC|600V V(DRM)|40A I(T)RMS|TO-208AA TRIAC|600V V(DRM)|12A I(T)RMS|TO-220 可控硅| 600V的五(DRM)的| 12A条口(T)的有效值|20 TRIAC|200V V(DRM)|40A I(T)RMS|TO-218 可控硅| 200伏五(DRM)的| 40A条口(T)的有效值|18 TRIAC|600V V(DRM)|12A I(T)RMS|TO-220 可控硅| 600V的五(DRM)的| 12A条口T)的有效值|20 Transient Voltage Suppressor Diodes 可控硅| 200伏五(DRM)的| 5A条口(T)的有效值|20 TRIAC|600V V(DRM)|15A I(T)RMS|TO-220 可控硅| 600V的五(DRM)的| 15A条口(T)的有效值|20 Transient Voltage Suppressor Diodes 可控硅| 400V五(DRM)的| 25A条口(T)的有效值|20 TRIAC|600V V(DRM)|4A I(T)RMS|TO-220 可控硅| 600V的五(DRM)的| 4A条口(T)的有效值|20 Transient Voltage Suppressor Diodes 可控硅| 800V的五(DRM)的| 12A条口(T)的有效值|20 TRIAC|500V V(DRM)|4A I(T)RMS|TO-220 可控硅| 500V五(DRM)的| 4A条口T)的有效值|20 TRIAC|400V V(DRM)|3A I(T)RMS|TO-202 可控硅| 400V五(DRM)的| 3A条口(T)的有效值|02 TRIAC|400V V(DRM)|4A I(T)RMS|TO-220 可控硅| 400V五(DRM)的| 4A条口(T)的有效值|20 TRIAC|200V V(DRM)|12A I(T)RMS|TO-220 可控硅| 200伏五(DRM)的| 12A条口(T)的有效值|20 TRIAC|400V V(DRM)|12A I(T)RMS|TO-220 可控硅| 400V五(DRM)的| 12A条口(T)的有效值|20 TRIAC|400V V(DRM)|40A I(T)RMS|TO-218 可控硅| 400V五(DRM)的| 40A条口(T)的有效值|18 TRIAC|400V V(DRM)|10A I(T)RMS|TO-220 可控硅| 400V五(DRM)的| 10A条口(T)的有效值|20 TRIAC|600V V(DRM)|40A I(T)RMS|TO-218 可控硅| 600V的五(DRM)的| 40A条口(T)的有效值|18 TRIAC|800V V(DRM)|12A I(T)RMS|TO-220 可控硅| 800V的五(DRM)的| 12A条口(T)的有效值|20 THYRISTOR MODULE|TRIAC 晶闸管模块|可控 TRIAC|800V V(DRM)|15A I(T)RMS|TO-220 可控硅| 800V的五(DRM)的| 15A条口(T)的有效值|20 Transient Voltage Suppressor Diodes 可控硅| 200伏五(DRM)的| 8A条口(T)的有效值|20 TRIAC|400V V(DRM)|4A I(T)RMS|TO-202 可控硅| 400V五(DRM)的| 4A条口(T)的有效值|02 Transient Voltage Suppressor Diodes 可控硅| 400V五(DRM)的| 8A条口(T)的有效值|20 TRIAC|600V V(DRM)|8A I(T)RMS|TO-220 可控硅| 600V的五(DRM)的| 8A条口(T)的有效值|20 TRIAC|200V V(DRM)|8A I(T)RMS|TO-220 可控硅| 200伏五(DRM)的| 8A条口(T)的有效值|20 TRIAC|400V V(DRM)|8A I(T)RMS|TO-220 可控硅| 400V五(DRM)的| 8A条口(T)的有效值|20 Transient Voltage Suppressor Diodes 可控硅| 700V的五(DRM)的| 25A条口(T)的有效值|20 可控硅| 200伏五(DRM)的| 10A条口(T)的有效值|20 TRIAC|300V V(DRM)|6A I(T)RMS|TO-220 TRIAC|600V V(DRM)|25A I(T)RMS|TO-39 TRIAC|600V V(DRM)|8A I(T)RMS|TO-202 TRIAC|500V V(DRM)|8A I(T)RMS|TO-202 TRIAC|200V V(DRM)|3A I(T)RMS|TO-202 TRIAC|500V V(DRM)|25A I(T)RMS|TO-220 TRIAC|200V V(DRM)|8A I(T)RMS|TO-202 TRIAC|600V V(DRM)|3A I(T)RMS|TO-220 TRIAC|400V V(DRM)|8A I(T)RMS|TO-202 TRIAC|800V V(DRM)|16A I(T)RMS|TO-220 TRIAC|600V V(DRM)|25A I(T)RMS|PRESS-13 TRIAC|500V V(DRM)|15A I(T)RMS|TO-3 TRIAC|500V V(DRM)|40A I(T)RMS|TO-218VAR TRIAC|200V V(DRM)|10A I(T)RMS|TO-203AA TRIAC|200V V(DRM)|15A I(T)RMS|TO-208AA TRIAC|400V V(DRM)|10A I(T)RMS|TO-203AA TRIAC|400V V(DRM)|10A I(T)RMS|FBASE-R-HW30 TRIAC|600V V(DRM)|10A I(T)RMS|FBASE-R-HW30 TRIAC|200V V(DRM)|10A I(T)RMS|FBASE-R-HW30 TRIAC|200V V(DRM)|10A I(T)RMS|TO-208AA TRIAC|600V V(DRM)|10A I(T)RMS|TO-203AA TRIAC|200V V(DRM)|20A I(T)RMS|TO-220 TRIAC|200V V(DRM)|6A I(T)RMS|TO-220 TRIAC|500V V(DRM)|25A I(T)RMS|TO-218VAR TRIAC|600V V(DRM)|25A I(T)RMS|TO-218VAR TRIAC|400V V(DRM)|25A I(T)RMS|TO-218VAR TRIAC|400V V(DRM)|40A I(T)RMS|TO-218VAR TRIAC|200V V(DRM)|40A I(T)RMS|TO-218VAR TRIAC|400V V(DRM)|10A I(T)RMS|TO-8 RF inductor, ceramic core, 5% tol, SMT, RoHS TRIAC|400V V(DRM)|25A I(T)RMS|FBASE-R TRIAC|600V V(DRM)|25A I(T)RMS|FBASE-R TRIAC|500V V(DRM)|25A I(T)RMS|FBASE-R TRIAC|200V V(DRM)|25A I(T)RMS|FBASE-R TRIAC|600V V(DRM)|25A I(T)RMS|TO-220 TRIAC|400V V(DRM)|25A I(T)RMS|TO-220 TRIAC|400V V(DRM)|15A I(T)RMS|TO-220 TRIAC|200V V(DRM)|15A I(T)RMS|TO-220 TRIAC|500V V(DRM)|8A I(T)RMS|TO-220 TRIAC|600V V(DRM)|25A I(T)RMS|TO-208AA TRIAC|400V V(DRM)|40A I(T)RMS|TO-208AA TRIAC|400V V(DRM)|40A I(T)RMS|IST-3RT-1/4 TRIAC|500V V(DRM)|12A I(T)RMS|TO-220 TRIAC|200V V(DRM)|12A I(T)RMS|TO-220AB TRIAC|400V V(DRM)|6A I(T)RMS|TO-220 TRIAC|600V V(DRM)|6A I(T)RMS|TO-220 TRIAC|700V V(DRM)|40A I(T)RMS|TO-218 TRIAC|200V V(DRM)|4A I(T)RMS|TO-220 TRIAC|600V V(DRM)|16A I(T)RMS|TO-220 TRIAC|600V V(DRM)|5A I(T)RMS|TO-220 TRIAC|200V V(DRM)|10A I(T)RMS|TO-220 TRIAC|600V V(DRM)|10A I(T)RMS|TO-220 TRIAC|600VV(DRM)|8AI(T)RMS|TO-220
TRIAC|600VV(DRM)|25AI(T)RMS|FBASE-R
TRIAC|600VV(DRM)|25AI(T)RMS|CAN
TRIAC|600VV(DRM)|25AI(T)RMS|TO-39
TRIAC|800VV(DRM)|25AI(T)RMS|TO-220AB
THYRISTORMODULE|TRIAC
TRIAC|600VV(DRM)|25AI(T)RMS|TO-220AB
TRIAC|600VV(DRM)|25AI(T)RMS|TO-220
TRIAC|600VV(DRM)|25AI(T)RMS|TO-218
TRIAC|600VV(DRM)|25AI(T)RMS|TO-218VAR
TRIAC|600VV(DRM)|25AI(T)RMS|PRESS-13
TRIAC|200V V(DRM)|25A I(T)RMS|TO-220
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Samsung Semiconductor Co., Ltd. Vishay Intertechnology, Inc. STMicroelectronics N.V. Xicon Passive Components Anpec Electronics, Corp. Littelfuse, Inc. International Rectifier, Corp. Motorola Mobility Holdings, Inc. Electronic Theatre Controls, Inc. Mitsubishi Electric, Corp. Jiangsu Changjiang Electronics Technology Co., Ltd. GTM, Corp.
|
APT6025BVFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 600V 25A 0.250 Ohm
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Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
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IRG4BC40K |
Insulated Gate Bipolar Transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体 绝缘门双极晶体管IGBTs)(短路额定超快速绝缘栅型双极型晶体管) INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A) 600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
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International Rectifier, Corp. IRF[International Rectifier]
|
HFA25PB60 |
600V 25A HEXFRED Discrete Diode in a TO-247 (2 LEAD) package
|
International Rectifier
|
100JB12L 35MB100A 35MB10A 35MB120A 100JB10L 100JB1 |
10 to 35 Amp Rectifier Bridges V(rrm): 400V; 25A rectifier bridge V(rrm): 1200V; 35A rectifier bridge V(rrm): 100V; 25A rectifier bridge V(rrm): 1000V; 25A rectifier bridge V(rrm): 1000V; 10A rectifier bridge V(rrm): 100V; 10A rectifier bridge V(rrm): 400V; 10A rectifier bridge V(rrm): 1200V; 10A rectifier bridge V(rrm): 50V; 10A rectifier bridge V(rrm): 200V; 10A rectifier bridge V(rrm): 600V; 10A rectifier bridge V(rrm): 800V; 10A rectifier bridge V(rrm): 1200V; 25A rectifier bridge V(rrm): 1000V; 35A rectifier bridge V(rrm): 50V; 25A rectifier bridge V(rrm): 600V; 25A rectifier bridge
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IRF[International Rectifier]
|
SSH25N40 SSH25N35 |
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 25A I(D) | TO-247VAR 晶体管| MOSFET的| N沟道| 400V五(巴西)直|5A条(丁)|47VAR TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 25A I(D) | TO-247VAR
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FQP6N60C FQPF6N60C |
600V N-Channel Advance Q-FET C-Series 600V N-Channel MOSFET
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FAIRCHILD[Fairchild Semiconductor]
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