| PART |
Description |
Maker |
| Q67006-A9195-A901 Q67000-A9210-A901 Q67000-A9210-C |
CAP CER DISC 1800PF 2KV 10% RAD
CAP CER DISC 220PF 2KV 10% RAD
5-V Low-Drop Fixed Voltage Regulator 5 - V低拖放固定稳压器
|
SIEMENS AG
|
| P8SG-053R6ZH52M P8SG-0505ZH52M P8SG-247R2ZH52M |
Input voltage:5V, output voltage /-3.6V ( /-200mA), 5.2KV isolated 1.5W regulated single output
Input voltage:5V, output voltage /-5V ( /-150mA), 5.2KV isolated 1.5W regulated single output
Input voltage:24V, output voltage /-7.2V ( /-100mA), 5.2KV isolated 1.5W regulated single output
|
PEAK electronics
|
| CAS300M12BM2 |
1.2kV, 5.0 mΩ All-Silicon Carbide Half-Bridge Module
|
Cree, Inc
|
| CM600HA-24H |
TRANSISTOR,IGBT POWER MODULE,INDEPENDENT,1.2KV V(BR)CES,600A I(C)
|
Mitsubishi
|
| DMN2300U DMN2300U-7 |
20V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 ESD Protected Gate 2kV
|
TY Semiconductor Co., Ltd
|
| GP400LSS12S |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1.2KV V(BR)CES | 400A I(C) 晶体管| IGBT功率模块|独立| 1.2KV五（巴西）国际消费电子展|四楼一（c
|
ITT, Corp.
|
| FS8R12KF |
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 8A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 1.2KV五（巴西）国际消费电子展| 8A条一（c
|
ECM Electronics, Ltd.
|
| CM10MD24H |
TRANSISTOR | IGBT POWER MODULE | 3-PH BRIDGE | 1.2KV V(BR)CES | 20A I(C) 晶体管| IGBT功率模块| 3 - PH值大桥| 1.2KV五（巴西）国际消费电子展|甲一（c
|
ITT, Corp.
|
| IXGA15N120C |
TRANSISTOR | IGBT | N-CHAN | 1.2KV V(BR)CES | 30A I(C) | TO-263AA 晶体管| IGBT的|正陈| 1.2KV五（巴西）国际消费电子展| 30A条一（c）|63AA
|
IXYS, Corp.
|
