| PART |
Description |
Maker |
| IRL3714L IRL3714S IRL3714 IRL3714STRR |
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 36A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 20V的五（巴西）直| 36A条（丁）|63AB
HEXFET? Power MOSFET
Power MOSFET(Vdss=20V, Rds(on)max=20mohm, Id=36A)
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
|
International Rectifier, Corp.
http://
IRF[International Rectifier]
|
| IRF3704 IRF3704L IRF3704S IRF3704STRL IRF3704STRR |
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A)
Power MOSFET(Vdss=20V Rds(on)max=9.0mohm Id=77A)
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=77A?)
Power MOSFET(Vdss=20V/ Rds(on)max=9.0mohm/ Id=77A)
CONNECTOR, PICOFLEX, 4WAY; Connector type:Wire-to-Board; Ways, No. of:4; Termination method:Crimp; Rows, No. of:2; Pitch:1.27mm; Series:91935 RoHS Compliant: Yes 功率MOSFET（减振钢板基本\u003d 20V的，的Rds（on）最大值\u003d 9.0mohm，身份证\u003d 77A条?
TRANSISTOR | MOSFET | N-CHANNEL | 20V V(BR)DSS | 77A I(D) | TO-263AB
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| CTN368 CTN369 |
1.000W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 1.000A Ic, 50 - hFE
0.750W General Purpose PNP Plastic Leaded Transistor. 20V Vceo, 0.500A Ic, 50 - hFE
|
Continental Device India Limited
|
| NEL230397 NEM2708B20 NEM2310B20 NEM1725B20 NEL2301 |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 2A I(C) | STX-M3
TRANSISTOR | BJT | NPN | 3.6A I(C) | RFMOD
TRANSISTOR | BJT | NPN | 7.2A I(C) | RFMOD 晶体管|晶体管|叩| 7.2AI（丙）| RFMOD
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 600MA I(C) | STX-M3 晶体管|晶体管|叩| 20V的五（巴西）总裁| 600毫安一（c）|希捷- M3
TRANSISTOR | BJT | NPN | 4.5A I(C) | FO-57CVAR 晶体管|晶体管|叩| 4.5AI（丙）|7CVAR
|
Abracon, Corp.
Renesas Electronics, Corp.
|
| CDA1585BC |
0.400W General Purpose NPN Plastic Leaded Transistor. 20V Vceo, 2.000A Ic, 220 - 500 hFE
PNP EPITAXIAL PLANAR SILICON TRANSISTOR
|
CDIL[Continental Device India Limited]
|
| 2SC3327 2SC3327B |
TRANSISTOR | BJT | NPN | 20V V(BR)CEO | 300MA I(C) | SPAK
TRANSISTOR SILICON NPN EPITAXIAL TYPE FOR MUTING AND SWITCHING APPLICATIONS
|
TOSHIBA
|
| TPC8207 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSIII)
TRANSISTOR,MOSFET,MATCHED PAIR,N-CHANNEL,20V V(BR)DSS,6A I(D),SO
|
Toshiba Semiconductor
|
| ZXTP26020DMFTA ZXTP26020DMF |
20V LOW VCE(SAT ) PNP SURFACE MOUNTED TRANSISTOR
Discrete - Bipolar Transistors - Transistor (BJT) Master Table - Transistors
|
Diodes Incorporated
|
| 2SC4115S |
Low Frequency Transistor (20V, 3A)
|
ROHM[Rohm]
|
| 2SAR522M 2SAR522UB 2SAR522EB |
General purpose transistor(-20V,-0.2A)
|
Rohm
|
| 2SD2150 |
Low Frequency Transistor(20V, 3A)
|
ROHM[Rohm]
|
| ECH8668 |
Power MOSFET, 20V, 7.5A, 17mOhm, -20V, -5A, 38mOhm, Complementary Dual ECH8
|
ON Semiconductor
|
