
	Part Number	Hot Search : MBD444 SC461 DM9220 100BA 7C101 ST246D00 MT4S32U 8F004B
	Product Description
	Full Text Search

K4R271669A - 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.

K4R271669A_323024.PDF Datasheet

Part No.

K4R271669A K4R441869A-NMCG6 K4R441869A-NMCK7 K4R441869A-NMCK8 K4R271669A-NMCK7 K4R271669A-NMCK8 K4R271669A-NBMCCG6 K4R441869A-N_MCK8 K4R271669A-N_MCK7 K4R271669A-N_MCK8 K4R441869A K4R441869A-N_MCG6 K4R441869A-N_MCK7 K4R271669AM-CG6 K4R271669AN-CK8 K4R271669AM-CK7

Description

256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz.
256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz.
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.

File Size

4,046.09K / 64 Page

Maker

SAMSUNG[Samsung semiconductor]
Samsung Electronic

JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: K4R271669B-NCK8

Maker: SAMSUNG

Pack: BGA

Stock: Reserved

Unit price for :

50: $6.46

100: $6.14

1000: $5.82

Email: oulindz@gmail.com

Contact us

Homepage

http://www.samsung.com/Products/Semiconductor/

Download

[ K4R271669A K4R441869A-NMCG6 K4R441869A-NMCK7 K4R441869A-NMCK8 K4R271669A-NMCK7 K4R271669A-NMCK8 K4R2 Datasheet PDF Downlaod from IC-ON-LINE.CN

]
[ K4R271669A K4R441869A-NMCG6 K4R441869A-NMCK7 K4R441869A-NMCK8 K4R271669A-NMCK7 K4R271669A-NMCK8 K4R2 Datasheet PDF Downlaod from Datasheet.HK

]
[K4R271669A K4R441869A-NMCG6 K4R441869A-NMCK7 K4R441869A-NMCK8 K4R271669A-NMCK7 K4R271669A-NMCK8 K4R2 Datasheet PDF Downlaod from Maxim4U.com

] :-)

[ View it Online ] [ Search more for K4R271669A ]

[ Price & Availability of K4R271669A by FindChips.com ]

Full text search : 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.

Product Description search : 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz.

Related Part Number

PART	Description	Maker
K4R271669B-NCK7 K4R271669B-MCK7 K4R271669B-MCK8 K4	256K x 16/18 bit x 32s banks Direct RDRAMTM 256 × 16/18位32秒银行直接RDRAMTM	SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
HYS72V128321GR-7-D HYS72V128321GR-7.5-D HYS72V1283	1GB PC133 (2-2-2) 2-bank available 2Q02 512MB PC133 (3-3-3) 1-bank POT 100 OHM 3/8 SQ CERM SL ST 2GB PC133 (3-3-3) 2-bank available 4Q02 256MB PC133 (3-3-3) 1-bank End-of-Life 512MB PC100 (2-2-2) 1-bank End-of-Life 1GB PC133 (3-3-3) 2-bank End-of-Life 2GB PC133 (2-2-2) 2-bank available 4Q02 PC133 Registered SDRAM-Modules PC133的SDRAM的注册模 1GB PC133 (3-3-3) 1-bank available tbd GB的PC133的（3-3-3银行提供待定 16M X 72 SYNCHRONOUS DRAM MODULE, 5.4 ns, DMA168	Infineon Technologies AG Infineon Technologies A...
M32L1632512A	256K x 32-Bit x 2-Bank SGRAM	Elite Semiconductor
K4R441869A K4R271669A-NMCG6 K4R271669A-NMCK7 K4R27	256K x 16/18 bit x 216 Dependent Banks Direct RDRAMTM 256 × 16/18位2 16属银行直接RDRAMTM	Sunon, Inc. SAMSUNG SEMICONDUCTOR CO. LTD.
46500 VDRS14T275BSC VDRS10P385BSE VDRS14T460TME VD	VDR Metal Oxide Varistors Standard Var MOV 275VAC/350VDC 4500A 430V Radial Bulk Voltage Dependent Resistor, RESISTOR, VOLTAGE DEPENDENT, 505 V, 67 J, THROUGH HOLE MOUNT, RADIAL LEADED, ROHS COMPLIANT Voltage Dependent Resistor, RESISTOR, VOLTAGE DEPENDENT, 615 V, 135 J, THROUGH HOLE MOUNT, RADIAL LEADED, ROHS COMPLIANT Voltage Dependent Resistor, RESISTOR, VOLTAGE DEPENDENT, 350 V, 63 J, THROUGH HOLE MOUNT, RADIAL LEADED, ROHS COMPLIANT Voltage Dependent Resistor, RESISTOR, VOLTAGE DEPENDENT, 560 V, 120 J, THROUGH HOLE MOUNT, RADIAL LEADED, ROHS COMPLIANT Voltage Dependent Resistor, RESISTOR, VOLTAGE DEPENDENT, 225 V, 67 J, THROUGH HOLE MOUNT, RADIAL LEADED, ROHS COMPLIANT	Vishay Siliconix Vishay BCcomponents
SIOV-S10K20 SIOV-S05K250 SIOV-S20K1000 SIOV-S20K11	RESISTOR, VOLTAGE DEPENDENT, 26 V, 3.1 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 320 V, 8.2 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 1465 V, 410 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 14 V, 10 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 150 V, 60 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 170 V, 74 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 180 V, 78 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 200 V, 85 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 22 V, 14 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 26 V, 18 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 300 V, 130 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 31 V, 22 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 320 V, 140 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 350 V, 151 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 38 V, 26 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 150 V, 3.6 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 200 V, 4.9 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 180 V, 4.5 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 22 V, 0.5 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 225 V, 5.6 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 100 V, 2.5 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 45 V, 2.5 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 100 V, 5.9 J, THROUGH HOLE MOUNT RADIAL LEADED RESISTOR, VOLTAGE DEPENDENT, 45 V, 5.4 J, THROUGH HOLE MOUNT RADIAL LEADED Leaded varistors, StandarD series SIOV metal oxide varistors SIOV metal oxide varistors	爱普科斯（中国）投资有限公司 EPCOS
HYS72V2200GU-10 HYS72V2200GU-8 HYS64V2200GU-10 HYS	Network Cable Assembly; Connector Type A:T568A/B Modular Plug; Connector Type B:T568A/B Modular Plug; Cable Length:7ft; Approval Categories:Augmented Category 6 standards; cord color per TIA/EIA-606 standard RoHS Compliant: Yes 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 4M X 64 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 2M X 72 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 2M X 64 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168 KPT 3C 3#20 SKT PLUG 3.3 2米x 64/72-Bit一银行内存模块3.3 4米64/72-Bit 2银行内存模块 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 4M X 72 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 2M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 3.3V 2M x 64/72-Bit 1 BANK SDRAM Module 3.3V 4M x 64/72-Bit 2 BANK SDRAM Module 4M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA168 3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module	Siemens Semiconductor G... SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG SIEMENS A G
HYS72D32000GU-7-A HYS64D32000GU-7-A HYS72D64020GU-	256MB (32Mx64) PC2100 1-bank 512MB (64Mx72) PC2100 2-bank 512MB (64Mx64) PC2100 2-bank 512MB (64Mx72) PC1600 2-bank 256MB (32Mx72) PC1600 1-bank End-of-Life 512MB (64Mx64) PC1600 2-bank 12MB的（64Mx64）PC1600 2银行 256MB (32Mx72) PC2100 1-bank 56MB的（32Mx72）PC2100 1银行	Infineon Technologies AG
IDT70V7278S	HIGH-SPEED 3.3V 32K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS	Integrated Device Technology
ASP-122952-01	BANK 1 IS DIFFERENTIAL PAIR, BANK 2& 3 ARE SINGLE ENDED	Samtec, Inc
HYS72D32300GBR-6-C HYS72D64320GBR-6-C HYS72D128320	DDR SDRAM Modules - 512 MB (64Mx72) PC3200 2-bank; Available 3Q04 DDR SDRAM Modules - 512 MB (64Mx72) PC3200 1-bank; Available 3Q04 DDR SDRAM Modules - 256MB (32Mx72) PC3200 1-bank, FBGA based; Available 3Q04 DDR SDRAM Modules - 512 MB (64Mx72) PC2700 2-bank; Available 2Q04 DDR SDRAM Modules - 512 MB (64Mx72) PC2700 1-bank; Available 2Q04 DDR SDRAM Modules - 256 MB (32Mx72) PC2700 1-bank; Available 2Q04 DDR SDRAM Modules - 1 GB (128Mx72) PC2700 2-bank; Available 2Q04 184-Pin Registered Double Data Rate SDRAM Module	INFINEON[Infineon Technologies AG]

Related keyword From Full Text Search System

K4R271669A 技术资料下载	K4R271669A Timer	K4R271669A cost	K4R271669A Amp	K4R271669A semiconductor
K4R271669A microcontroller	K4R271669A image sensor	K4R271669A quad op amp	K4R271669A 电子元件中文资料网站	K4R271669A IC DATA SHET