| PART |
Description |
Maker |
| M12S64322A-6BG M12S64322A-6TG M12S64322A-7BG M12S6 |
512K x 32 Bit x 4 Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| IC42S16102-7TI |
512K x 16 Bit x 2 Banks (16-MBIT) SDRAM
|
Integrated Circuit Solution Inc
|
| M12L64322A-5BG M12L64322A-5TG M12L64322A-6BG M12L6 |
512K x 32 Bit x 4 Banks Synchronous DRAM
|
Elite Semiconductor Memory Technology Inc.
|
| IC42S32202 |
512K x 32 Bit x 4 Banks (64-MBIT) SDRAM
|
Integrated Circuit Solution
|
| M32L32321SA-5.5F M32L32321SA-5.5Q M32L32321SA-5F M |
512K x 32 Bit x 2 Banks Synchronous Graphic RAM
|
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
|
| M32L32321SA M32L32321SA-5.5F M32L32321SA-5.5Q M32L |
512K x 32 Bit x 2 Banks Synchronous Graphic RAM
|
ETC
|
| A43L0616BV-7F A43L0616BV-6F A43L0616BV-7UF |
512K X 16 Bit X 2 Banks Synchronous DRAM 12k × 16位2银行同步DRAM
|
AMIC Technology Corporation
AMIC Technology, Corp.
|
| IC42S16101-6T IC42S16101-6TI IC42S16101-7TG IC42S1 |
512K x 16 Bit x 2 Banks (16-MBIT) SDRAM 12k × 16位2银行6兆）内存
|
Rohm Co., Ltd.
Electronic Theatre Controls, Inc.
Atmel, Corp.
|
| K4S643232H-TC70 K4S643232H-TL70 K4S643232H-TC_L50 |
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 183MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 166MHz
64Mb (512K x 32bit x 4 banks) SDRAM, LVTTL, 200MHz
64Mb H-die (x32) SDRAM Specification
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| MBM29LV004TC-12 MBM29LV004TC-90PNS MBM29LV004TC-70 |
4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 120 ns, PDSO40
4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 70 ns, PDSO40
4M (512K X 8) BIT 512K X 8 FLASH 3V PROM, 90 ns, PDSO40
IC, LN PWR DC2DC CONVERT 48VDC-5VDC 1.2A MFR
4M (512K X 8) BIT
|
FUJITSU LTD
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
|
| MT6V16M16 MT6V16M18 |
512K x 16 x 32 banks RDRAM(512K x 16 x 32同步动态RAM)
512K x 18 x 32 banks RDRAM(512K x 18 x 32同步动态RAM)
|
Micron Technology, Inc.
|
