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BC556B - PNP SILICON PLANAR EPITAXIAL TRANSISTORS PNP SILICON PLANAR EPITAXIAL TRANSISTORS 进步党硅外延平面晶体

BC556B_323545.PDF Datasheet

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BC556B BC556 BC558 BC557B BC557C BC556A BC557 BC557A

Description

PNP SILICON PLANAR EPITAXIAL TRANSISTORS
PNP SILICON PLANAR EPITAXIAL TRANSISTORS 进步党硅外延平面晶体

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57.43K / 3 Page

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Part: BC556B

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1N2282 1N1185A 1N1612 1N3055 1N4510 1N3573R 1N1581	35 A, 300 V, SILICON, RECTIFIER DIODE, DO-5 40 A, 150 V, SILICON, RECTIFIER DIODE, DO-5 5 A, 50 V, SILICON, RECTIFIER DIODE, DO-4 0.125 A, SILICON, SIGNAL DIODE 12 A, 1000 V, SILICON, RECTIFIER DIODE, DO-4 3.5 A, 500 V, SILICON, RECTIFIER DIODE, DO-4 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-4 1 A, 400 V, SILICON, SIGNAL DIODE, DO-4 1 A, 200 V, SILICON, SIGNAL DIODE, DO-4 0.8 A, SILICON, SIGNAL DIODE 35 A, 800 V, SILICON, RECTIFIER DIODE, DO-5 275 A, 150 V, SILICON, RECTIFIER DIODE, DO-9
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