| PART |
Description |
Maker |
| MC9S12XEG128MAL S912XET256J2MAA S312XEP100JMAAR S9 |
Microcontrollers
MC9S12XEP100 Reference Manual Covers MC9S12XE Family
Features of the MC9S12XE-Family are listed here. Please see Table D-2.for memory options and Table D-2. for the peripheral features that are available on the different family members.
HCS12X Microcontrollers
|
Freescale Semiconductor, Inc
Freescale Semiconductor...
|
| IPD230N06NG IPD230N06NG08 |
OptiMOS庐 Power-Transistor Features For dc/dc converters and sync. rectification
OptiMOS? Power-Transistor Features For dc/dc converters and sync. rectification
30 A, 60 V, 0.023 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
Infineon Technologies AG
|
| SPP18P06P09 SPP18P06PG |
SIPMOS? Power-Transistor Features P-Channel Enhancement mode
SIPMOS庐 Power-Transistor Features P-Channel Enhancement mode
|
Infineon Technologies AG
|
| SPD07N20 SPD07N20G SPD07N2008 SPU07N20G SPD07N20GX |
SIPMOS? Power Transistor Features N channel Enhancement mode Avalanche rated
SIPMOSò Power Transistor Features N channel Enhancement mode Avalanche rated
7 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
Infineon Technologies AG
|
| BC558 |
FEATURES
|
Olitech Electronics Co....
|
| RLT360-BL-TO18 |
FEATURES AND APPLICATIONS
|
Roithner LaserTechnik G...
|
| 59052-X-T-01-A 59052-X-U-04-A 59052-X-T-04-A 59052 |
Firecracker Features and Benefits
|
HAMLIN Position and Movement Sensor Solutions
http://
|
| EV-VND7140AJ |
General device features
|
STMicroelectronics
|
| IPD400N06NG IPD400N06NG08 |
OptiMOS? Power-Transistor Features N-channel enhancement - normal level Avalanche rated
OptiMOS庐 Power-Transistor Features N-channel enhancement - normal level Avalanche rated
|
Infineon Technologies AG
|
| 59105-1-S-00-0 59105-2-S-00-0 59105-2-T-00-0 59105 |
Terminal Flange Features and Benefits
|
HAMLIN Position and Movement Sensor Solutions
|
| EFM8SB20F32G-A-QFN32 EFM8SB20F64G-A-QFN32 EFM8SB20 |
The EFM8SB2 highlighted features are listed below
|
Silicon Laboratories
|
