PART |
Description |
Maker |
HY57V641620HGT-6I HY57V641620HGT-7I HY57V641620HGT |
SDRAM - 64Mb 4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54 4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54 x16 SDRAM x16内存 4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54 CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:MLCC; Dielectric Material:Ceramic; Leaded Process Compatible:Yes CAP SMD 0805 .01UF 50V 5% CONNECTOR ACCESSORY From old datasheet system
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Hynix Semiconductor, Inc. Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
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HY57V561620CLT HY57V561620CT |
4 Banks x 4M x 16Bit Synchronous DRAM
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Hynix Semiconductor
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K4S561633F K4S561633F-C K4S561633F-E K4S561633F-F1 |
4M x 16Bit x 4 Banks Mobile SDRAM in 54BOC
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SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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K4S161622D K4S161622D-TC/L10 K4S161622D-TC/L55 K4S |
512K x 16Bit x 2 Banks Synchronous DRAM
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Samsung Electronic Samsung semiconductor
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K4M56163LG K4M56163LG-RN_F75 K4M56163LG-RN_G K4M56 |
2M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
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Samsung semiconductor
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K4S51153LF K4S51163LF-YPC_L_F1H K4S51163LF-YPC_L_F |
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
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Samsung Electronic SAMSUNG SEMICONDUCTOR CO. LTD.
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IC42S16400A-7BIG IC42S16400A-6BG IC42S16400A-6BIG |
1M x 16Bit x 4 Banks (64-MBIT) SDRAM 100万16 × 4银行4兆位)内
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Elpida Memory, Inc. Integrated Circuit Solu...
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KM416S1120D KM416S1120DT-G_F10 KM416S1120DT-G_F6 K |
512K x 16bit x 2 Banks Synchronous DRAM LVTTL
|
ETC[ETC] Samsung semiconductor
|
K4S561633C-RLN |
4M x 16Bit x 4 Banks Synchronous DRAM in 54CSP Data Sheet
|
Samsung Electronic
|
K4S511533F K4S511533F-YC K4S511533F-F1H K4S511533F |
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 8米16 × 4银行4FBGA移动SDRAM
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
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K4M561633G K4M561633G-RBF1H K4M561633G-RBF1L K4M56 |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54 4M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
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SAMSUNG SEMICONDUCTOR CO. LTD.
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KM416S1021C KM416S1021CT-G7 KM416S1021CT-G8 KM416S |
512K x 16Bit x 2 Banks Synchronous DRAM with SSTL interface 12k × 16 × 2银行同步DRAM接口的萨里卫星技术有限公
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
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