PART |
Description |
Maker |
HYM72V8030GS-60 HYM72V8030GS-50 HYM72V8020GS-60 HY |
8M x 72 Bit ECC FPM DRAM Module buffered 8M x 72-Bit Dynamic RAM Module (ECC - Module) 8M x 72-Bit Dynamic RAM Module 8M X 72 FAST PAGE DRAM MODULE, 60 ns, DMA168 Tools, Hand Crimp; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No
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SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG SIEMENS A G
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HYM72V4015GS-60 HYM72V4015GS-50 HYM72V4005GS-50 HY |
4M x 72 Bit ECC DRAM Module buffered 4M x 72-Bit EDO-DRAM Module (ECC - Module) 4M x 72-Bit EDO-DRAM Module 4M X 72 EDO DRAM MODULE, 60 ns, DMA168
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SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
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HYM72V8025GS-60 HYM72V8025GS-50 HYM72V8035GS-60 HY |
8M x 72 Bit ECC EDO DRAM Module buffered 8M x 72-Bit EDO- DRAM Module (ECC - Module) 8M x 72-Bit EDO- DRAM Module 8M X 72 EDO DRAM MODULE, 60 ns, DMA168 8M x 72-Bit EDO- DRAM Module 8M X 72 EDO DRAM MODULE, 50 ns, DMA168
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SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
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M391T2953BGZ0-CD5_CC M391T2953BGZ3-CD5_CC M378T335 |
64M X 64 DDR DRAM MODULE, 0.5 ns, DMA240 TVS ZENER BIDIRECT 1500W 13V SMC TVS BIDIRECT 1500W 130V SMC 240pin Unbuffered Module based on 512Mb B-die 64/72-bit Non-ECC/ECC
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SAMSUNG SEMICONDUCTOR CO. LTD.
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HYM72V2005GU-60 HYM72V2005GU-50 HYM64V2005GU-60 HY |
3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module 2M x 72 Bit ECC DRAM Module unbuffered 2M x 64 Bit DRAM Module unbuffered 3.3V 2M x 64-Bit EDO-DRAM Module 3.3V 2M x 72-Bit EDO-DRAM Module 2M X 72 EDO DRAM MODULE, 60 ns, DMA168
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Siemens Semiconductor G... Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
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HYM72V1620GS-50 HYM72V1620GS-50- HYM72V1620GS-60 H |
16M x 72-Bit Dynamic RAM Module 16M X 72 FAST PAGE DRAM MODULE, 60 ns, DMA168 From old datasheet system 16M x 72-Bit Dynamic RAM Module (ECC - Module )
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SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
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M381L6423DTM-LCC_C4 M368L1624DTM M368L1624DTM-CCC |
184pin Unbuffered Module based on 256Mb D-die 64/72-bit Non ECC/ECC
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Samsung Electronic SAMSUNG[Samsung semiconductor]
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HYM368020GS-60 HYM368020S-60 Q67100-Q985 HYM368020 |
8M x 36 Bit FPM DRAM Module with Parity 8M x 36 Bit DRAM Module with Parity 8M x 36-Bit Dynamic RAM Module 8M X 36 FAST PAGE DRAM MODULE, 60 ns, SMA72 8M x 36-Bit Dynamic RAM Module 8米36位动态随机存储器模块
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SIEMENS[Siemens Semiconductor Group] Infineon SIEMENS AG
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M368L6523BUM-LCC M381L6523BUM-LB3 M368L6523BTM-LCC |
64M X 64 DDR DRAM MODULE, 0.65 ns, DMA184 128M X 64 DDR DRAM MODULE, 0.65 ns, DMA184 128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184 DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II DDR SDRAM的缓冲模84pin缓冲模块基于512Mb乙芯片与64/72-bit非ECC / ECC6 TSOP-II Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70ns; Series:S29AL Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL Single-Supply Voltage Translator 6-SOT-23 -40 to 85
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
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HYM321005GS-60 HYM321005GS-50 HYM321005S-60 HYM321 |
From old datasheet system 1M x 32-Bit Dynamic RAM Module (Hyper Page Mode - EDO Version) 1M x 32 Bit DRAM Module 1M x 32 Bit EDO DRAM Module
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SIEMENS AG SIEMENS[Siemens Semiconductor Group] Infineon
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HMD16M72D9A-13 HMD16M72D9A-F13 HMD16M72D9A-F12 HMD |
Synchronous DRAM Module 128Mbyte (8Mx72bit),DIMM with ECC based on 16Mx8, 4Banks, 4K Ref., 3.3V 同步DRAM模块128MbyteMx72bit),带ECC内存的基础6Mx8BanksK的参考。,3.3 Synchronous DRAM Module 128Mbyte (8Mx72bit),DIMM with ECC based on 16Mx8, 4Banks, 4K Ref., 3.3V 同步DRAM模块128MbyteMx72bit),带ECC内存的基础16Mx8BanksK的参考。,3.3
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Hanbit Electronics Co.,Ltd. Hanbit Electronics Co., Ltd.
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HSD32M72D9H-80 HSD32M72D9H-75 HSD32M72D9H-10 HSD32 |
Synchronous DRAM Module 256Mbyte (32Mx72bit),DIMM with ECC based on 32Mx8, 4Banks, 8K Ref., 3.3V
|
Hanbit Electronics Co.,Ltd
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