PART |
Description |
Maker |
MX29F016TI-90 MX29F016TI-12 29F016-12 29F016-90 |
16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY 16M-BIT [2M X 8] CMOS EQUAL SECTOR FLASH MEMORY
|
http:// Macronix International
|
MX29LV081B MX29LV081BTC-70 MX29LV081BTC-90 MX29LV0 |
64M-BIT [8M x 8] CMOS EQUAL SECTOR FLASH MEMORY 8M-BIT [1M x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY
|
MCNIX[Macronix International] ETC[ETC]
|
MX29LV033ATI-70 MX29LV033ATI-70G MX29LV033ATI-90 M |
32M-BIT [4M x 8] CMOS EQUAL SECTOR FLASH MEMORY
|
List of Unclassifed Manufacturers
|
MX29F040 MX29F040TC-70 MX29F040TC-70G MX29F040TI-9 |
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY
|
MCNIX[Macronix International]
|
MX25L1602 MX25L1602MC-50 |
16M-BIT [16M x 1] CMOS SERIAL FLASH EEPROM
|
Macronix International
|
MX29LV065XBC-90 MX29LV065XBI-90 MX29LV065TC-90 MX2 |
64M-BIT [8M x 8] CMOS EQUAL SECTOR FLASH MEMORY 8M X 8 FLASH 2.7V PROM, 120 ns, PDSO48 64M-BIT [8M x 8] CMOS EQUAL SECTOR FLASH MEMORY 8M X 8 FLASH 2.7V PROM, 90 ns, PDSO48
|
Macronix International Co., Ltd. http://
|
29F080-12 |
8M-BIT [1024K x 8] CMOS EQUAL SECTOR FLASH MEMORY 800万位[1024K × 8]的CMOS平等部门闪存
|
Macronix International Co., Ltd.
|
K4E640412D K4E660412D K4E640412D-JCL K4E640412D-TC |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle. 16M x 4bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
UPD4416004 UPD4416004G5-A17-9JF UPD4416004G5-A15-9 |
16M-BIT CMOS FAST SRAM 4M-WORD BY 4-BIT
|
NEC Corp. NEC[NEC]
|
MX29LV040CTC-12 MX29LV040CTC-12G |
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 3V PROM, 120 ns, PDSO32
|
Macronix International Co., Ltd.
|
UPD4218160LE-60 |
CMOS 16M-Bit DRAM
|
ETC
|
TH58V128DC |
128 Mbit (16M x 8bit) CMOS NAND E2PROM (16M BYTE SmartMedia)
|
Toshiba Semiconductor
|