| PART |
Description |
Maker |
| IXDN75N120 L209 |
High Voltage IGBT
IGBT Discretes: NPT IGBT
From old datasheet system
High Voltage IGBT 150 A, 1200 V, N-CHANNEL IGBT
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| IXDH30N120D1 IXDT30N120D1 IXDH30N120 IXDT30N120 |
IGBT Discretes: NPT IGBT
High Voltage IGBT with optional Diode
|
IXYS[IXYS Corporation]
|
| APT30GT60BRD |
The Thunderbolt IGBT?/a> is a new generation of high voltage power IGBTs.
Thunderbolt IGBT & FRED 600V 55A
The Thunderbolt IGBT is a new generation of high voltage power IGBTs.
The Thunderbolt IGBT⑩ is a new generation of high voltage power IGBTs.
The Thunderbolt IGBTis a new generation of high voltage power IGBTs.
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| IXSX35N120AU1 |
High Voltage IGBT with Diode(VCES200V，VCE(sat)4V的高电压绝缘栅双极晶体管(带二极管 70 A, 1200 V, N-CHANNEL IGBT, TO-247
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| IXSH15N120B IXST15N120B |
1200V HiPerFAST IGBT
HIGH Voltage IGBT
|
IXYS Corporation
|
| UX-C2B HVR-1X-40B SHV-02 SHV-03 SHV-03S SHV-06NK S |
High-Voltage Rectifier Diodes
High-Voltage Rectifier Diodes 0.35 A, 8 V, SILICON, SIGNAL DIODE
High-Voltage Rectifier Diodes 0.002 A, 4.5 V, SILICON, SIGNAL DIODE
High-Voltage Rectifier Diodes 0.002 A, 12000 V, SILICON, SIGNAL DIODE
High-Voltage Rectifier Diodes 0.002 A, 6000 V, SILICON, SIGNAL DIODE
High-Voltage Rectifier Diodes 0.002 A, 8000 V, SILICON, SIGNAL DIODE
High-Voltage Rectifier Diodes 0.002 A, SILICON, SIGNAL DIODE
|
Sanken Electric Co., Ltd.
SANKEN[Sanken electric]
Sanken Electric Co.,Ltd.
|
| 10-FZ06NBA110FP-M306L28 |
high speed IGBT with C6 MOSFET and SiC buck diodes
|
Vincotech
|
| APT100GF60JRD |
The Fast IGBTis a new generation of high voltage power IGBTs. ⑩的快速IGBT是一种高压IGBT的新一代
The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
The Fast IGBT is a new generation of high voltage power IGBTs.
Fast IGBT & FRED 600V 140A
|
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
|
| 1N5524 1N5545 1N5519 1N5520 1N5521 1N5522 1N5523 1 |
Nom zener voltage:33.0V; measured from 1000-3000Hz; low voltage avalanche zener diode; high performance: low noise, low leakage
Low Current Operation at 250 ，Low Reverse Leakage,Low Noise Zener Diode 250 的低电流运算，低反向泄露，低噪声稳压二极
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE/ LOW LEAKAGE
MSTBVA 2,5/13-G-5,08
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE LOW LEAKAGE
LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE
|
Electronic Theatre Controls, Inc.
Knox Semiconductor Inc
KNOX[Knox Semiconductor Inc]
KNOX[Knox Semiconductor, Inc]
|
| BSM400GA120DL 400A12L C67076-A2302-A70 |
IGBT Power Module (Low Loss IGBT Low inductance single switch Including fast free- wheeling diodes) 680 A, 1200 V, N-CHANNEL IGBT
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| APT33GF120HR |
Fast IGBT 1200V 38A
The Fast IGBT is a new generation of high voltage power IGBTs
|
Advanced Power Technology Ltd.
|
