PART |
Description |
Maker |
FW250 |
N-Channl Silicon MOSFET Ultrahigh-Speed Switching Applications - Channl硅MOSFET的超高速开关应
|
Sanyo Electric Co., Ltd. Sanyo Electric Co.,Ltd. Sanyo Semicon Device
|
CPH5801 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode DC/DC Converter Applications
|
SANYO[Sanyo Semicon Device]
|
BF543 |
RF-MOSFET - VDS=15V, gfs=12mS, Gp=22dB, F=1dB Silicon N-Channel MOSFET Triode
|
INFINEON[Infineon Technologies AG]
|
C2M0045170P |
Silicon Carbide Power MOSFET C2M MOSFET Technology
|
Cree, Inc
|
FW507 |
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
VEC2820 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
VEC2811 |
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
SCH2830 |
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
SCH2821 |
MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device
|
Sanyo Semicon Device
|
C2M0080120D |
Silicon Carbide Power MOSFET Z-FETTM MOSFET
|
Cree, Inc
|
C2M1000170D |
Silicon Carbide Power MOSFET Z-FETTM MOSFET
|
Cree, Inc
|
CTLM7110-M832D |
SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET AND LOW VF SILICON SCHOTTKY RECTIFIER
|
Central Semiconductor Corp
|