PART |
Description |
Maker |
2N6304 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
Microsemi
|
MRF3866R1 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
Microsemi Corporation
|
2N5109 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
Advanced Power Technolo... Advanced Power Technology
|
BFY90 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
Microsemi Corporation
|
2N3866A 2N3866 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
ADPOW[Advanced Power Technology]
|
MRF581A MRF581 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
ADPOW[Advanced Power Technology]
|
BFR91 BRF91 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
Microsemi Corporation
|
MRF904 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
MICROSEMI[Microsemi Corporation]
|
2N3866_2N3866A MSC1067 2N3866A 2N3866 |
RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS From old datasheet system
|
MICROSEMI[Microsemi Corporation]
|
MRF1001 MRF1001A MSC1311 |
From old datasheet system RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
|
MICROSEMI[Microsemi Corporation]
|
2SC5195 2SC5195-T1 2SC5195NE68819 |
Discrete MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 微波低噪声放大器NPN硅外延晶体管
|
NEC Corp. NEC, Corp.
|