| PART |
Description |
Maker |
| EGN045MK |
High Voltage - High Power GaN-HEMT
|
EUDYNA[Eudyna Devices Inc]
|
| ESN26A090IV |
High Voltage - High Power GaN-HEMT
|
EUDYNA[Eudyna Devices Inc]
|
| IP2010PBF |
High Frequency GaN-Based Integrated Power Stage
|
International Rectifier
|
| MGF0840G |
High-power GaN HEMT (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| MGF0846G |
High-power GaN HEMT (small signal gain stage)
|
Mitsubishi Electric Semiconductor
|
| CLE539W |
High Power GaN White LED Flat Window Can, Hermetically Sealed
|
ETC
|
| MC08ED150J-F MC08CA020D-F MC08CA050D-F MC08CA060D- |
Multilayer RF Capacitors High-Frequency, High-Power, High-Voltage Chips with Nonmagnetic Option
|
Cornell Dubilier Electronics, Inc.
http://
Cornell Dubilier Electronic...
Cornell Dubilier Electr...
|
| BUT70W 8602 |
HIGH VOLTAGE NPN POWER TRANSISTOR
HIGH POWER NPN TRANSISTOR
From old datasheet system
HIGH VOLTAGE NPN POWER TRANSISTOR
8-bit MCU for automotive, 16 Kbyte Flash/ROM, 10-bit ADC, 4 timers, SPI, SCI
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| 2SC2928 |
HIGH VOLTAGE, HIGH SPEED AND HIGH POWER SWITCHING
|
HITACHI[Hitachi Semiconductor]
|
| CGH35030F |
30 W, 3300-3900 MHz, 28V, GaN HEMT for WiMAX S BAND, GaN, N-CHANNEL, RF POWER, HEMFET
|
Cree, Inc.
|
