| PART |
Description |
Maker |
| MTD20N03HDL_D ON2480 |
TMOS POWER FET LOGIC LEVEL 20 AMPERES 30 VOLTS
From old datasheet system
|
ON Semi
|
| PHD16N03LT |
N-channel TrenchMOS?/a> logic level FET
N-channel Trenchmos (tm) logic level FET
N-channel TrenchMOS⑩ logic level FET
From old datasheet system
N-channel TrenchMOSlogic level FET 16 A, 30 V, 0.067 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| PHD108NQ03LT PHB108NQ03LT PHP_PHB_PHD108NQ03LT-02 |
TrenchMOS(tm)logic level FET
From old datasheet system
TrenchMOS TM logic level FET
TrenchMOS logic level FET 75 A, 25 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| BUK9614-55A BUK9514-55A |
Aluminum Snap-In Capacitor; Capacitance: 820uF; Voltage: 160V; Case Size: 35x25 mm; Packaging: Bulk
TrenchMOS logic level FET
TrenchMOS TM logic level FET
TrenchMOS(tm) logic level FET
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| MTP10N40 MTP10N40E ON2540 MTP10N40E-D |
TMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 10 AMPERES 400 VOLTS RDS(on) = 0.55 OHMS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| MTB2N60E_D ON2407 MTB2N60E MTB2N60E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 2.0 AMPERES 600 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTB3N120E_D ON2421 MTB3N120E MTB3N120E-D |
TMOS E-FET High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 3.0 AMPERES 1200 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MTB4N80E1_D ON2427 MTB4N80E1 MTB4N80E1-D |
TMOS E-FET High Energy Power FET D2PAK-SL Straight Lead N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 4.0 AMPERES 800 VOLTS
From old datasheet system
|
ON Semiconductor
MOTOROLA[Motorola, Inc]
|
| MMFT1N10E_D ON2216 MMFT1N10E MMFT1N10 |
MEDIUM POWER TMOS FET 1 AMP 100 VOLTS 1000 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA
N-hannel Enhancement-ode Logic Level SOT23
From old datasheet system
|
Motorola Mobility Holdings, Inc.
ON Semi
MOTOROLA[Motorola, Inc]
|
| PHP63NQ03LT PHB63NQ03LT PHD63NQ03LT |
TrenchMOS logic level FET 68.9 A, 30 V, 0.0177 ohm, N-CHANNEL, Si, POWER, MOSFET
TrenchMOS(tm) logic level FET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BUK9523-75A BUK9523_9623_75A-01 BUK9623-75A |
TrenchMOS(tm) logic level FET
TrenchMOS⑩ logic level FET
From old datasheet system
TrenchMOS TM logic level FET
TrenchMOS logic level FET
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| PHD82NQ03LT PHP82NQ03LT PHB82NQ03LT PHP_PHB_PHD82N |
TrenchMOS?/a> logic level FET
TrenchMOS logic level FET
TrenchMOS⑩ logic level FET
From old datasheet system
TrenchMOS(tm) logic level FET
|
http://
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
