| PART |
Description |
Maker |
| GS840E18 GS840E36B-166I GS840E18B-166I GS840E32T-1 |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256K X 18 CACHE SRAM, 8.5 ns, PBGA119
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 36 CACHE SRAM, 8.5 ns, PBGA119
4Mb56K x 18Bit) Synchronous Burst SRAM(4M位（256K x 18位）同步静态RAM（带2位脉冲地址计数器）)
|
http://
GSI Technology, Inc.
|
| AS7C33128PFD36A-166TQI AS7C33128PFD32A AS7C33128PF |
3.3V 128K x 36 pipeline synchronous SRAM, clock speed - 150MHz
3.3V 128K x 36 pipeline synchronous SRAM, clock speed - 133MHz
3.3V 128K x 36 pipeline synchronous SRAM, clock speed - 100MHz
3.3V 128K x 32 pipeline synchronous SRAM, clock speed - 166MHz
3.3V 128K x 32 pipeline synchronous SRAM, clock speed - 150MHz
3.3V 128K x 32 pipeline synchronous SRAM, clock speed - 133MHz
3.3V 128K x 32 pipeline synchronous SRAM, clock speed - 100MHz
3.3V 128K X 32/36 pipeline burst synchronous SRAM 128K X 32 STANDARD SRAM, 10 ns, PQFP100
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
Alliance Semiconductor Corp...
|
| K7A403200M-16 K7A403200M K7A403200M-10 K7A403200M- |
128K x 32-Bit Synchronous Pipelined Burst SRAM Rev. 5.0 (DEC. 1999)
128Kx32-Bit Synchronous Pipelined Burst SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| IDT71V3576YS150PF IDT71V3576YS133PF IDT71V3576YS13 |
128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 3.8 ns, PQFP100
128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 4.2 ns, PQFP100
128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect 256K X 18 CACHE SRAM, 3.8 ns, PQFP100
128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect 256K X 18 CACHE SRAM, 4.2 ns, PBGA119
128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 4.2 ns, PBGA119
128K x 36, 256K x 18 3.3V Synchronous SRAMs 3.3V I/O, Pipelined Outputs Burst Counter, Single Cycle Deselect 128K X 36 CACHE SRAM, 4.2 ns, PBGA165
|
Integrated Device Technology, Inc.
|
| GS820H32AQ-138I GS820H32AQ-6I GS820H32AQ-4I GS820H |
100MHz 12ns 64K x 32 2M synchronous burst SRAM
64K X 32 CACHE SRAM, 12 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 11 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 9.7 ns, PQFP100
117MHz 11ns 64K x 32 2M synchronous burst SRAM
66MHz 18ns 64K x 32 2M synchronous burst SRAM
150MHz 9ns 64K x 32 2M synchronous burst SRAM
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology, Inc.
|
| 7C33128PFS36A |
3.3V 128K x 32/36 pipeline burst synchronous SRAM
|
Alliance Semiconductor
|
| GVT71128B36 71128B36 |
128K X 36 SYNCHRONOUS BURST SRAM
From old datasheet system
|
Galvantech
|
| K7B201825A |
128K x 18-Bit Synchronous Burst SRAM Data Sheet
|
Samsung Electronic
|
| AS7C33128PFD32A |
(AS7C33128PFD32A / AS7C33128PFD36A) 3.3V 128K X 32/36 pipeline burst synchronous SRAM
|
Alliance Semiconductor Corporation
|
| GS840E36AGT-180I |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 128K X 36 CACHE SRAM, 8 ns, PQFP100
|
GSI Technology, Inc.
|
| IDT71V546 INTEGRATEDDEVICETECHNOLOGYINC.-IDT71V546 |
128K x 36/ 3.3V Synchronous SRAM with ZBT Feature/ Burst Counter and Pipelined Outputs
|
Integrated Device Technology
|
| IDT71V2546SA100BG IDT71V2546SA100BGI IDT71V2546SA1 |
128K x 36/ 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O/ Burst Counter Pipelined Outputs
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs
|
IDT[Integrated Device Technology]
|
