| PART |
Description |
Maker |
| 2SK2768-01L 2SK2654-01 2SK2647-01MR |
3.5 A, 900 V, 5.5 ohm, N-CHANNEL, Si, POWER, MOSFET
8 A, 900 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P
4 A, 800 V, 4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F15
|
|
| FQA11N90C-F109 |
FQA11N90C_F109 N-Channel QFET MOSFET 900 V, 11 A, 1.1 Ohm
|
Fairchild Semiconductor
|
| STW6NC90Z |
5.2 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
|
STMICROELECTRONICS
|
| 2SK1419-YA 2SK1425-YD 2SK1461-YA |
15 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
60 A, 60 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3P
5 A, 900 V, 3.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218
|
|
| IXCY01N90E |
900 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA PLASTIC PACKAGE-3
|
IXYS, Corp.
|
| RFL1N15L RFL1N12L |
1A/ 120V and 150V/ 1.900 Ohm/ Logic Level/ N-Channel Power MOSFETs
1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| 2SK261009 2SK2610 |
5 A, 900 V, 2.5 ohm, N-CHANNEL, Si, POWER, MOSFET
Chopper Regulator, DC−DC Converter and Motor Drive Applications
|
Toshiba Semiconductor
|
| FQP5N90 |
900V N-Channel MOSFET 5.4 A, 900 V, 2.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| 9N90L-T47-T 9N90G-T47-T 9N90G-T3P-T 9N90L-T3P-T 9N |
900V N-CHANNEL MOSFET
9 A, 900 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET
|
UNISONIC TECHNOLOGIES CO LTD
|
| FQPF2N90 |
900V N-Channel MOSFET 1.4 A, 900 V, 7.2 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| 2SK2487 2SK2487-A |
8 A, 900 V, 1.6 ohm, N-CHANNEL, Si, POWER, MOSFET
MOS Field Effect Transistor
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
|
NEC[NEC]
|
| APT46GA90JD40 |
High Speed PT IGBT
Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation
Microsemi, Corp.
|
|
