| PART |
Description |
Maker |
| 3186Y30I90999 3186-30I90999 3186Y30K90999 3186-30K |
Definite Purpose Contactor 3-pole, 75-90 FLA AC Coil
|
Tyco Electronics
|
| 3100-30V12999 3100Y30U12999 3100-30U12999 3100Y30U |
Definite Purpose Contactor 3-pole, 120 FLA AC Coil
|
http://
Tyco Electronics
|
| CY7C1461AV33-100AXC CY7C1463AV33-100AXC CY7C1461AV |
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL垄芒 Architecture
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构6-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM) 36兆位米x 36 / 2 M中的x 18/512K × 72）流体系结构，通过与总线延迟（带总线延迟结构的的36 - Mbit通过的SRAM100万x 36 / 2 M中的x 18/512K × 72）流的SRAM
|
Cypress Semiconductor Corp.
|
| AS7C25512FT32_36A AS7C25512FT32A-10TQC AS7C25512FT |
2.5V 512K x 32/36 flowthrough burst synchronous SRAM 512K X 36 STANDARD SRAM, 8.5 ns, PQFP100
2.5V 512K x 32/36 flowthrough burst synchronous SRAM 512K X 32 STANDARD SRAM, 10 ns, PQFP100
2.5V 512K x 32/36 flowthrough burst synchronous SRAM 512K X 32 STANDARD SRAM, 8.5 ns, PQFP100
DIODE ZENER SINGLE 1000mW 47Vz 5.5mA-Izt 0.05 5uA-Ir 35.8Vr DO41-GLASS 5K/REEL
Sync SRAM - 2.5V
2.5V 512K x 32/36 flowthrough burst synchronous SRAM
|
Alliance Semiconductor, Corp.
Alliance Semiconductor Corporation
ALSC
Alliance Semiconductor ...
|
| AS5C4008F-35 AS5C4008F-35_H AS5C4008F-35_LH AS5C40 |
512K x 8 SRAM SRAM MEMORY ARRAY
512K X 8 STANDARD SRAM, 20 ns, CDSO32 CERAMIC, LCC-32
512K X 8 STANDARD SRAM, 17 ns, CDFP32 CERAMIC, DFP-32
512K X 8 STANDARD SRAM, 35 ns, CDFP32 CERAMIC, DFP-32
512K X 8 STANDARD SRAM, 15 ns, CDFP32 CERAMIC, DFP-32
512K X 8 STANDARD SRAM, 12 ns, CDIP32
512K X 8 STANDARD SRAM, 25 ns, CQCC32
512K X 8 STANDARD SRAM, CDSO32
512K X 8 STANDARD SRAM, 15 ns, CDSO32
512K X 8 STANDARD SRAM, 12 ns, CDFP32
|
Austin Semiconductor, Inc
Micross Components
AUSTIN SEMICONDUCTOR INC
|
| CY62157EV30LL-45ZXI CY62157EV30LL-45BVI |
8-Mbit (512K x 16) Static RAM 512K X 16 STANDARD SRAM, 45 ns, PBGA48
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| TC554001FTI-85V TC554001FI-85V |
512K word x 8 Static RAM(512K x 8 静RAM) 12k字8静态存储器（为512k字8静态RAM）的
|
Toshiba Corporation
Toshiba, Corp.
|
| TC554001FTL-85L TC554001FL-10L TC554001FTL-10L |
512K word x 8 Static RAM(512K x 8 静RAM) 12k字8静态存储器（为512k字8静态RAM）的
|
Toshiba Corporation
Toshiba, Corp.
|
| TC55V16366FF-133 |
512K Word x 36 Bit Synchronous Pipelined Burst Static RAM(512K 字x 36位同步管道脉冲静RAM)
|
Toshiba Corporation
|
| SST28SF040A-120-4I-EHE SST28SF040A-120-4C-EHE SST2 |
4 Mbit (512K x8) SuperFlash EEPROM
512K X 8 FLASH 2.7V PROM, 200 ns, PQCC32
512K X 8 FLASH 5V PROM, 90 ns, PDSO32
512K X 8 FLASH 5V PROM, 120 ns, PQCC32
512K X 8 FLASH 5V PROM, 120 ns, PDSO32
|
Silicon Storage Technol...
SILICON STORAGE TECHNOLOGY INC
|
| CY14B104MA-ZSP25XI CY14B104KA-ZS25XCT CY14B104KA C |
4 Mbit (512K x 8/256K x 16) nvSRAM with Real-Time-Clock
512K X 8 NON-VOLATILE SRAM, 20 ns, PDSO44
|
CYPRESS SEMICONDUCTOR CORP
|
