| PART |
Description |
Maker |
| FSPYE234D1 FSPYE234F4 FN4873 FSPYE234R4 FSPYE234F |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 250 V, 0.215 ohm, N-CHANNEL, Si, POWER, MOSFET
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| 5962F9671501VCC 5962F9671501VXC ACTS125MS ACTS125H |
Radiation Hardened Quad Buffer/ Three-State
Radiation Hardened Quad Buffer Three-State
From old datasheet system
Radiation Hardened Quad Buffer, Three-State 辐射加固四缓冲，三
ECONOLINE: RD & RC - Dual Output from a Single Input Rail- 1kVDC & 2kVDC Isolation- Power Sharing on Output- Custom Solutions Available- UL94V-0 Package Material- Efficiency to 86% 辐射加固四缓冲，三
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| HCTS390MS HCTS390D HCTS390DMSR HCTS390HMSR HCTS390 |
Radiation Hardened Octal Transparent Latch/ Three-State
Radiation Hardened Dual Decade Ripple Counter
|
INTERSIL[Intersil Corporation]
|
| JANSR2N7408 FN4637 |
Quadruple 2-Input Positive-NAND Gates 14-VQFN -40 to 85
Formerly Available As FSF450R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs
From old datasheet system
Formerly Available As FSF450R4, Radiation Hardened, SEGR Resistant,N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| HS-2600RH 5962D9567101VPC HS7B-2600RH-Q HS7-2600RH |
Radiation Hardened Wideband/ High Impedance Operational Amplifier
Radiation Hardened Wideband, High
Impedance Operational Amplifier(抗辐射宽带、高阻抗运算放大
CONNECTOR ACCESSORY
Radiation Hardened Wideband, High Impedance Operational Amplifier OP-AMP, 12 MHz BAND WIDTH, CDIP8
Radiation Hardened Wideband, High Impedance Operational Amplifier OP-AMP, 6000 uV OFFSET-MAX, CDIP8
|
Intersil Corporation
Intersil, Corp.
http://
|
| FSPYE230D1 FSPYE230F FSPYE230F4 FSPYE230R4 FN4852 |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 12 A, 200 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| FSPL230D1 FSPL230F FSPL230F3 FSPL230F4 FSPL230R4 F |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 200 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| SM602HRR SM600HRR SM612 SM600 SM610 SM612R SM600R |
(SM600 - SM612) SWITCHING REGULATOR POWER OUTPUT STAGES
RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS SPECIALTY ANALOG CIRCUIT, MBCY4
RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS 抗辐射高效，5安培开关稳压器
|
MICROSEMI CORP-ANALOG MIXED SIGNAL GROUP
Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
http://
|
| MX043G MX043J MX043 |
Radiation Hardended MOSFET
RADIATION HARDENED SEGR-RESISTANT N-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
MICROSEMI[Microsemi Corporation]
|
| IRHN7130 IRHN7130-15 |
Simple Drive Requirements
RADIATION HARDENED POWER MOSFET
100V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-1 package
|
International Rectifier
|
