| PART |
Description |
Maker |
| BT151-600 BT151 |
600V Vdrm 12A Sensitive Gate Silicon Controlled Rectifier, 1.7@23AV Peak On-State Voltage, 200V/μs Rise of Off-State Voltage
Silicon Controlled Rectifiers
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SemiWell Semiconductor
|
| LS31801111 LS3180-GK LS3180-H LS3180-J LS3180-JM L |
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:50mA; Current, It av:8A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:25mA; Current, It av:8A; Gate Trigger Current Max, Igt:25mA RoHS Compliant: Yes
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:35mA; Current, It av:8A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
Triac; Thyristor Type:Logic Level; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):8A; Gate Trigger Current (QI), Igt:10mA; Current, It av:8A; Gate Trigger Current Max, Igt:10mA RoHS Compliant: Yes T1毫米）广角发光二极管
T1 (3mm) WIDE ANGLE LED LAMP T1毫米）广角发光二极管
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| A290021T-120 A290021TL-55 A290021T-90 A290021TL-12 |
256K X 8 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory 256K × 8位CMOS 5.0伏只，引导扇区闪
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:800V; On State RMS Current, IT(rms):25A; Gate Trigger Current (QI), Igt:50mA; Current, It av:25A; Forward Current:24A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On-State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:35mA; Current, It av:16A; Forward Current:16A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
MB 32C 32#20 SKT RECP
SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:1000V; On State RMS Current, IT(rms):16A; Peak Non Repetitive Surge Current, Itsm:200A; Gate Trigger Current Max, Igt:25mA RoHS Compliant: Yes
SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):16A; Peak Non Repetitive Surge Current, Itsm:200A; Gate Trigger Current Max, Igt:25mA RoHS Compliant: Yes
MB 6C 6#20 PIN RECP
Reed Switch; Pull-In Amp Turns Max:20; Pull-In Amp Turns Min:10; Circuitry:SPST-NO; Switching Current Max:0.5A; Switching Voltage Max:200V; Mounting Type:Surface Mount; Contact Rating:10 VA; Supply Current:1.5A RoHS Compliant: Yes
RELAY, REED SPDT 12VDC
SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:800V; On-State RMS Current, IT(rms):16A; Peak Non Repetitive Surge Current, Itsm:200A; Gate Trigger Current Max, Igt:25mA RoHS Compliant: Yes
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:800V; On State RMS Current, IT(rms):16A; Gate Trigger Current (QI), Igt:35mA; Current, It av:16A; Forward Current:16A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
SCR Thyristor; Thyristor Type:Standard Gate; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):25A; Peak Non Repetitive Surge Current, Itsm:350A; Gate Trigger Current Max, Igt:35mA RoHS Compliant: Yes
Limit Switch,VERTICAL R/A,SPDT,ON-(ON),QUICK CONNECT Terminal,SIMULATED ROLLER
SWITCHES
256K X 8 Bit CMOS 5.0 Volt-only/ Boot Sector Flash Memory
|
AMIC Technology, Corp.
AMIC Technology Corporation
|
| IRG4PC40W IRG4PC40 |
600V Warp 60-150 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A) 绝缘栅双极晶体管（VCES和\u003d 600V电压的Vce（on）典\u003d 2.05V，@和VGE \u003d 15V的，集成电路\u003d 20A条）
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IRF[International Rectifier]
International Rectifier, Corp.
|
| BD140-25 BD136-25 BD138-25 |
TRANSISTOR | BJT | PNP | 45V V(BR)CEO | 1.5A I(C) | TO-126
Triac; Thyristor Type:Sensitive Gate; Peak Repetitive Off-State Voltage, Vdrm:200V; On State RMS Current, IT(rms):800mA; Gate Trigger Current (QI), Igt:3mA; Current, It av:0.8A; Leaded Process Compatible:Yes RoHS Compliant: Yes
TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1.5A I(C) | TO-126 晶体管|晶体管|进步党| 80V的五（巴西）总裁| 1.5AI（丙）|126
|
Electronic Theatre Controls, Inc.
|
| MCR100-8G MCR100-4G MCR100-004G |
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors 0.8 A, 200 V, SCR, TO-92
Sensitive Gate Silicon Controlled Rectifier; Package: TO-92 (TO-226) 5.33mm Body Height; No of Pins: 3; Container: Bulk; Qty per Container: 5000
|
On Semiconductor
|
| STGW20NB60HD 6204 |
N-CHANNEL 20A - 600V TO-247 PowerMESH IGBT N沟道20A 600V 247 PowerMESH IGBT
N-CHANNEL 20A - 600V TO-247 PowerMESH TM IGBT
From old datasheet system
N-CHANNEL 20A - 600V TO-247 PowerMESH IGBT
|
STMicroelectronics N.V.
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| STB20NM60 STB20NM60-1 STP20NM60 STP20NM60FP STB20N |
N-CHANNEL 600V - 0.25ohm - 20A TO-220/FP/D2PAK/I2PAK MDmeshPower MOSFET
N-CHANNEL 600V - 0.25 OHM - 20A TO-220/TO-220FP/D2PAK/I2PAK MDMESH POWER MOSFET
|
STMicroelectronics
|
| STB20NM60D |
N-channel 600V - 0.26Ω - 20A - D2PAK FDmesh Power MOSFET
N-channel 600V - 0.26ヘ - 20A - D2PAK FDmesh⑩ Power MOSFET
|
STMicroelectronics
|
| STP25NM60N07 STB25NM60N STB25NM60N-1 STF25NM60N ST |
N-channel 600V - 0.140Ω - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh Power MOSFET
N-channel 600V - 0.140Ω - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh?/a> Power MOSFET
N-channel 600V - 0.140楼? - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh垄芒 Power MOSFET
N-channel 600V - 0.140ヘ - 20A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh⑩ Power MOSFET
|
http://
STMicroelectronics
|
| PC3ST11NSZ |
VDRM : 600V, Non-zero cross type DIP 4pin Phototriac Coupler for triggering
|
Sharp Electrionic Components
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