PART |
Description |
Maker |
IXGE75N100Z IXGE50N90Z IXTE9N65X4U IXGE50N50Z |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 75A I(C) TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 900V V(BR)CES | 50A I(C) TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 650V V(BR)DSS | 9A I(D) 晶体管| MOSFET功率模块|独立|650V五(巴西)直| 9A条(丁) TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 500V V(BR)CES | 50A I(C) 晶体管| IGBT功率模块|独立| 500V五(巴西)国际消费电子展| 50A条一(c
|
IXYS, Corp.
|
DE150-201N09-00 DE375-501N21-00 DE275-102N05-00 DE |
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 200V V(BR)DSS | 9A I(D) TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 21A I(D) TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 1KV V(BR)DSS | 5A I(D) 晶体管| MOSFET功率模块|独立| 1KV交五(巴西)直| 5A条(丁) TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 300V V(BR)DSS | 35A I(D) 晶体管| MOSFET功率模块|独立| 300V五(巴西)直| 35A条(丁) TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 500V V(BR)DSS | 4.5A I(D)
|
TE Connectivity, Ltd. Glenair, Inc.
|
2DI30D-050 2DI30D-050A |
POWER TRANSISTOR MODULE 功率晶体管模 POWER TRANSISTOR MODULE 30 A, 600 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR
|
FUJI ELECTRIC HOLDINGS CO., LTD. FUJI[Fuji Electric]
|
1DI300M-050 |
TRANSISTOR | BJT POWER MODULE | DARLINGTON | 450V V(BR)CEO | 300A I(C) Power Transistor Module
|
Fuji Electric
|
KT234510 KT234505 |
Split-dual bipolar transistor module. 100A, 600V. Split-Dual Bipolar Power Module (100 Amperes/600 Volts)
|
POWEREX[Powerex Power Semiconductors] Powerex Power Semicondu...
|
OMD60L60FL OMD150N06FL |
TRANSISTOR | IGBT POWER MODULE | FULL BRIDGE | 600V V(BR)CES | 75A I(C) 晶体管| IGBT功率模块|全桥| 600V的五(巴西)国际消费电子展| 75A条一c TRANSISTOR | MOSFET POWER MODULE | FULL BRIDGE | 60V V(BR)DSS | 150A I(D)
|
Unisonic Technologies Co., Ltd.
|
2N6533 2N6532 2N6530 2N6531 |
8 A N-P-N darlington power transistor. 120 V. 60 W. Gain of 1000 at 3 A. 8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 1000 at 5 A. 8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 500 at 3 A. 8 A N-P-N darlington power transistor. 80 V. 60 W. Gain of 1000 at 5 A. 8-AMPERE N-P-N DARLINGTON POWER TRANSISTORS From old datasheet system
|
General Electric Solid State ETC[ETC]
|
ZTX849SMTA X957SMTA FXT704STOA |
5 A, 30 V, NPN, Si, POWER TRANSISTOR 1 A, 300 V, PNP, Si, POWER TRANSISTOR 1000 mA, 100 V, PNP, Si, SMALL SIGNAL TRANSISTOR
|
ZETEX PLC DIODES INC
|
BSM150GAL100D BSM150GB100D |
TRANSISTOR | IGBT POWER MODULE | INDEPENDENT | 1KV V(BR)CES | 150A I(C) 晶体管| IGBT功率模块|独立| 1KV交五(巴西)国际消费电子展| 150A一(c TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1KV V(BR)CES | 150A I(C)
|
Infineon Technologies AG
|
2N6338 2N6341 2N6339 2N6340 |
POWER TRANSISTOR(25A,200W) 25 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-3
|
Mospec Semiconductor, Corp. MOSPEC[Mospec Semiconductor]
|
MP4303 |
Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
|
TOSHIBA
|