| PART |
Description |
Maker |
| CMLDM7002A |
SURFACE MOUNT PICOmini DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET 280 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Central Semiconductor, Corp.
|
| ENA0889 MCH6438 |
P-Channel Silicon MOSFET General-Purpose Switching Device Applications
200 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
Sanyo Semicon Device
SANYO SEMICONDUCTOR CO LTD
|
| 2SK1450 |
20 A, 450 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PB
N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
|
Sanyo
|
| 2SK2530 2SK2530TP-FA |
2000 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
|
SANYO[Sanyo Semicon Device]
|
| 2SJ596 2SJ596TP-FA |
TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 8A I(D) | TO-252VAR
P-Channel Silicon MOSFET DC / DC Converter Applications
|
SANYO[Sanyo Semicon Device]
|
| EMH2602 |
3500 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device
|
SANYO SEMICONDUCTOR CO LTD
Sanyo Semicon Device
|
| Q62702-F1055 BF997 |
From old datasheet system
Silicon N Channel MOSFET Tetrode (Integrated suppression network against spurious VHF oscillations) VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
|
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
|
| 2SK3781-01R |
DIODE SCHOTTKY SINGLE 25V 200mW 0.33V-vf 200mA-IFM 2mA-IF 0.5uA-IR SOD-323 3K/REEL 73 A, 200 V, 0.036 ohm, N-CHANNEL, Si, POWER, MOSFET
N-CHANNEL SILICON POWER MOSFET
|
Fuji Electric Holdings Co., Ltd.
FUJI[Fuji Electric]
|
| HAT1023R-EL-E HAT1023R |
7 A, 20 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8
Silicon P Channel Power MOSFET High Speed Power Switching
|
Renesas Electronics, Corp.
Renesas Electronics Corporation
|
| VEC2815 |
MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode
|
Sanyo Semicon Device
|
|
