| PART |
Description |
Maker |
| STU7NB100 6508 |
N - CHANNEL 1000V - 1.2 - 7.3A - Max220 PowerMESH TM MOSFET
From old datasheet system
N - CHANNEL 1000V - 1.2ohm - 7.3A - Max220 PowerMESH MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
|
| STP5NK60ZFP STD5NK60Z STD5NK60ZT4 STP5NK60Z |
N-CHANNEL 600V - 1.2ohm - 5A TO-220/TO-220FP/DPAK Zener-Protected SuperMESHPower MOSFET N沟道600V 1.2ohm - 5A条TO-220/TO-220FP/DPAK齐纳保护SuperMESH？功率MOSFET
N-CHANNEL 600V - 1.2ohm - 5A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH Power MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| STB3NC90Z-1 STP3NC90ZFP STP3NC90Z |
N-CHANNEL 900V - 3.2ohm - 3.5A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH?III MOSFET
N-CHANNEL 900V - 3.2ohm - 3.5A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESHIII MOSFET
N-CHANNEL 900V - 3.2ohm - 3.5A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH⑩III MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| OM6N100SA OM5N100SA OM3N100SA OM3N100ST OM1N100SA |
1000V; up to 6 Amp, N-channel MOSFET
1000V Single N-Channel Hi-Rel MOSFET in a D3 package
1000V Single N-Channel Hi-Rel MOSFET in a TO-254AA package
POWER MOSFET IN HERMETIC ISOLATED JEDEC PACKAGE
|
Omnirel
International Rectifier
ETC
List of Unclassifed Manufacturers
|
| STD4N20 |
N-CHANNEL 200V - 1.2 OHM - 4A DPAK/IPAK MESH OVERLAY MOSFET
N-CHANNEL 200V - 1.2ohm - 4A DPAK/IPAK MESH OVERLAY MOSFET
N-CHANNEL 200V - 1.2 OHM - 4A DPAK/IPAK MESH OVERLAY MOSFET
N-CHANNEL 200V - 1.2ohm - 4A DPAK/IPAK MESH OVERLAY⑩ MOSFET
N-CHANNEL 200V - 1.2ohm - 4A DPAK/IPAK MESH OVERLAYMOSFET
|
ST Microelectronics
STMicroelectronics
意法半导
|
| IRFY9140CM |
POWER MOSFET P-CHANNEL(BVdss=-100V, Rds(on)=0.2ohm, Id=-15.8A)
POWER MOSFET P-CHANNEL(BVdss=-100V Rds(on)=0.2ohm Id=-15.8A)
|
IRF[International Rectifier]
|
| IRFMG50 |
1000V Single N-Channel Hi-Rel MOSFET in a TO-254AA package
POWER MOSFET 1000V, N-CHANNEL THRU-HOLE (TO-254AA)
|
International Rectifier
|
| RURP8100 MUR8100E FN2780 MURP810 |
8A/ 1000V Ultrafast Diodes
From old datasheet system
(MUR8100E / MURP8100) 8A / 1000V Ultrafast Diodes
8A, 1000V Ultrafast Diodes(8A, 1000V超快二极用于开关电 8 A, 1000 V, SILICON, RECTIFIER DIODE, TO-220AC
8A, 1000V Ultrafast Diodes 8A条，1000V共超快二极管
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| APT1004R2KN APT1004RKN |
POWER MOS IV 1000V 3.6A 4.00 Ohm / 1000V 3.5A 4.20 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| OM6233SS OM6227SS OM6233SSV OM6231SS OM6232SS OM62 |
1000V Dual N-Channel MOSFET in a S-6D package
500V Dual N-Channel MOSFET in a S-6D package
400V Dual N-Channel MOSFET in a S-6D package
500V Dual N-Channel MOSFET in a S-6E package
1000V Dual N-Channel MOSFET in a S-6E package
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
10 A, 1000 V, 1.3 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, S-6D, SIP-6
400V Dual N-Channel MOSFET in a S-6E package 400V双N沟道MOSFET的在一个S - 6E条包
10 A, 1000 V, 1.3 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HERMETIC SEALED, S-6E, SIP-6
|
International Rectifier
Electronic Theatre Controls, Inc.
Atmel, Corp.
|
| OM6050SJ OM6051SJ OM6052SJ OM6053SJ OM6054SJ OM605 |
High Current, High Voltage 1000V , 10 Amp N-Channel, MOSFET, High Energy Capability(大电流，高电压，1000V , 10A，N沟道，MOS场效应管（高能容量）) 高电流，高电000V0安培N沟道，MOSFET的高能能力（大电流，高电压，1000V0A条，沟道来说，MOS场效应管（高能容量）
HIGH CURRENT MOSFET IN ISOLATED, TO-267 HERMETIC PACKAGE, SIZE 7 DIE, LOW RDS(on)
500V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
100V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
600V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
200V Single N-Channel Hi-Rel MOSFET in a TO-267AA package
|
International Rectifier
|
