PART |
Description |
Maker |
BSS84LT1_D ON0229 ON0228 |
From old datasheet system P-HANNEL ENHANCEMENT-ODE
|
ON Semi
|
MMDF2N06V_D ON2163 |
N-hannel Enhancement?ode Silicon Gate From old datasheet system
|
ON Semi
|
MMFT3055E_D ON2223 MMFT3055E-D |
Medium Power Field Effect Transistor N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount From old datasheet system N-hannel Enhancement-ode Logic Level SOT23
|
ON Semiconductor
|
MMG05N60D_D ON2233 MMG05N60D |
Insulated Gate Bipolar Transistor From old datasheet system N-hannel Enhancement-ode Silicon Gate
|
ONSEMI[ON Semiconductor]
|
MMFT3055VL MMFT3055VL_D ON2227 MMFT3055VLT3 |
1500 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-261AA TMOS POWER FET 1.5 AMPERES 60 VOLT N-hannel Enhancement-ode Silicon Gate From old datasheet system
|
MOTOROLA INC Motorola, Inc. ON Semi
|
MRF6P27160H_06 MRF6P27160H MRF6P27160HR6_06 MRF6P2 |
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET 2700 MHz, 35 W AVG., 28 V Single N??DMA Lateral N??hannel RF Power MOSFET
|
FREESCALE[Freescale Semiconductor, Inc] MOTOROLA
|
IRFNJ5305 |
P??HANNEL POWER MOSFET
|
Seme LAB
|
MFE211 MFE212 |
N-. HANNEL DUAL-GATE SILICON-NITRIDE PASSIVATED MOS FIELD-EFFECT TRANSISTORS
|
New Jersey Semi-Conductor Products, Inc.
|
MRF6S23100H MRF6S23100HR306 MRF6S23100HR3 MRF6S231 |
RF Power Field Effect Transistors 2300??400 MHz, 20 W Avg., 28 V, 2 x W??DMA Lateral N??hannel RF Power MOSFETs
|
Freescale Semiconductor, Inc MOTOROLA
|
IXTH40N30NBSP IXTH40N30 IXTM40N30 |
N-Channel Enhancement Mode MegaMOSFET(最大漏源击穿电00V,导通电.088Ω的N沟道增强B>MegaMOSFET) N-Channel Enhancement Mode MegaMOSFET(最大漏源击穿电00V,导通电.085Ω的N沟道增强B>MegaMOSFET) From old datasheet system N-Channel Enhancement MOSFET
|
IXYS Corporation
|
STP5NB40 STP5NB40FP 5321 |
N-Channel Enhancement Mode PowerMESHTM MOSFET(N沟道增强模式MOSFET) N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET N - CHANNEL ENHANCEMENT MODE PowerMESH] MOSFET From old datasheet system
|
意法半导 STMICROELECTRONICS[STMicroelectronics]
|