| PART |
Description |
Maker |
| HYB514100BJ-50- Q67100-Q759 Q67100-Q971 |
4M × 1-Bit Dynamic RAM(4M × 1位动态RAM)
4M x 1-Bit Dynamic RAM 4M X 1 FAST PAGE DRAM, 50 ns, PDSO20
|
SIEMENS AG
|
| IC41SV4105 IC41SV4105-50J IC41SV4105-50JG IC41SV41 |
DYNAMIC RAM, FPM DRAM
From old datasheet system
1Mx4 bit Dynamic RAM with Fast Page Mode
|
ICSI[Integrated Circuit Solution Inc]
|
| THM322020S-10 THM322020S-80 THM322020SG-10 THM3220 |
Chip-on-Glass (COG) Technology, 16 Characters x 2 Lines
2097152 WORDS x 32 BIT DYNAMIC RAM MODULE
2,097,152 WORDS x 32 BIT DYNAMIC RAM MODULE
2/097/152 WORDS x 32 BIT DYNAMIC RAM MODULE
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| HYB514400BJL-70 HYB514400BJL-60 HYB514400BJL-50 HY |
1 048 576 x 4-Bit Dynamic RAM
4 194 304 x 1-Bit Dynamic RAM
|
Infineon
|
| HYB5117800BSJ-70 HYB5117800BSJ-60 HYB5117800BSJ-50 |
-2M x 8 - Bit Dynamic RAM 2k Refresh
2M x 8-Bit Dynamic RAM
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| HYB5116405BJ-50 HYB5116405BJ-60 HYB5117405BJ-70 HY |
4M x 4-Bit Dynamic RAM 2k & 4k Refresh 4M X 4 EDO DRAM, 70 ns, PDSO24
POWERLINE: RP12-S_DA - 2:1 Wide Input Voltage Range- 12 Watts Output Power- 1.6kVDC Isolation- Over Current Protection- Five-Sided Continuous Shield- Standard DIP24 and SMD-Pinning- Efficiency to 88%
4M x 4-Bit Dynamic RAM 2k & 4k Refresh
|
SIEMENS A G
SIEMENS AG
http://
Siemens Semiconductor G...
|
| HYB5117800BSJ-60 HYB5117800BSJ-50 HYB5117800-60 HY |
2M x 8 Bit 2k 5 V 60 ns FPM DRAM
2M x 8 Bit 2k 3.3 V 60 ns FPM DRAM
2M x 8 Bit 2k 3.3 V 50 ns FPM DRAM
2M x 8 - Bit Dynamic RAM 2k Refresh (Fast Page Mode)
2M x 8-Bit Dynamic RAM
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| IC41C82002S IC41LV82002S IC41LV82002S-60T IC41C820 |
2Mx8 bit Dynamic RAM with EDO Page Mode
DYNAMIC RAM, EDO DRAM
|
Integrated Circuit Solu...
ICSI[Integrated Circuit Solution Inc]
|
| IC41C8512 IC41LV8512 IC41LV8512-60TI IC41C8512-35K |
DYNAMIC RAM, EDO DRAM
512K x 8 bit Dynamic RAM with EDO Page Mode
|
ICSI[Integrated Circuit Solution Inc]
|
| MK31VT464-10YE |
4194304 Word x 64 Bit Synchronous Dynamic RAM Module (1BANK)(4M瀛??4浣??姝ュ???AM妯″?)
4194304 Word x 64 Bit Synchronous Dynamic RAM Module (1BANK)(4M字64位同步动态RAM模块)
4194304 Word x 64 Bit Synchronous Dynamic RAM Module (1BANK)(4M字4位同步动态RAM模块)
From old datasheet system
|
OKI SEMICONDUCTOR CO., LTD.
|
| UPD4217805LLE-A50 UPD42S17805LLE-A50 UPD4217805LG5 |
3.3V OPERATION 16 M-BIT DYNAMIC RAM 2M-WORD BY 8-BIT,EDO
x8 EDO Page Mode DRAM x8 EDO公司页面模式DRAM
3.3V OPERATION 16 M-BIT DYNAMIC RAM 2M-WORD BY 8-BIT,HYPER PAGE MODE 3.3运行16位动态随机存储器2m-word8位，超页模式
|
NEC TOKIN America Inc.
NEC TOKIN, Corp.
|
