PART |
Description |
Maker |
HEF4505B HEF4505BF HEF4505BD HEF4505BN HEF4505BP H |
64-bit, 1-bit per word random access read/write memory From old datasheet system 64-bit/ 1-bit per word random access read/write memory
|
NXP Semiconductors PHILIPS[Philips Semiconductors]
|
MCM6227A MCM6227AWJ20 MCM6227AWJ20R2 MCM6227AWJ25 |
1M x 1 Bit Static Random Access Memory 100万1位静态随机存取存储器 1M x 1 Bit Static Random Access Memory 1M X 1 STANDARD SRAM, 35 ns, PDSO28 1M x 1 Bit Static Random Access Memory 1M X 1 STANDARD SRAM, 45 ns, PDSO28
|
Motorola Mobility Holdings, Inc. Motorola, Inc MOTOROLA[Motorola Inc]
|
GM76C88AL-15 GM76C88AL-12 GM76C88AL GM76C88ALK-15 |
x8 SRAM 65,536 Bit static random access memory organized as 8,192 words by 8 bits using CMOS 65536 Bit RAM
|
etc LG Semicon Co.,Ltd.
|
TC5565AFL-10 TC5565AFL-12 TC5565AFL-15 TC5565APL T |
65536 bit static random access memory organized as 8192 words by 8 bits using CMOS technology 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
5962-8876904KYA 5962-8876904KYC 5962-8876904KPA 59 |
5962-8876801PC · Hermetically Sealed Low If Wide Vcc Logic Gate Optocouplers 5962-8876904KPA · Hermetically Sealed Low If Wide Vcc Logic Gate Optocouplers 5962-8876904KXA · Hermetically Sealed Low If Wide Vcc Logic Gate Optocouplers 5962-8876904KPC · Hermetically Sealed Low If Wide Vcc Logic Gate Optocouplers 5962-88769022A · Hermetically Sealed Low If Wide Vcc Logic Gate Optocouplers 5962-8876903FC · Hermetically Sealed Low If Wide Vcc Logic Gate Optocouplers 5962-8876901PC · Hermetically Sealed Low If Wide Vcc Logic Gate Optocouplers 5962-8876901PA · Hermetically Sealed Low If Wide Vcc Logic Gate Optocouplers 5962-8876901XA · Hermetically Sealed Low If Wide Vcc Logic Gate Optocouplers 5962-8876901YA · Hermetically Sealed Low If Wide Vcc Logic Gate Optocouplers 5962-8876901YC · Hermetically Sealed Low If Wide Vcc Logic Gate Optocouplers
|
Agilent (Hewlett-Packard)
|
54S189 |
64-BIT RANDOM ACCESS MEMORY
|
Fairchild Semiconductor
|
S34MS01G1 S34MS02G1 S34MS04G1 |
1-bit ECC, x8 and x16 I/O, 1.8V VCC SLC NAND Flash for Embedded
|
Cypress Semiconductor
|
MB81464 MB81464-15 MB81464-12 |
MOS 262,144 BIT DYNAMIC RANDOM ACCESS MEMORY MOS 262144 Bit DRAM
|
Fujitsu Microelectronics Fujitsu Media Devices Limited Fujitsu Component Limited.
|
HM5118160BJ-8 HM5118160BLJ-8 |
1048576-word x 16-bit Dynamic Random Access Memory
|
Hitachi,Ltd.
|
K1S3216B1C K1S3216B1C-I |
2Mx16 bit Uni-Transistor Random Access Memory
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|