PART |
Description |
Maker |
MRF21045 |
MRF21045R3, MRF21045LR3, MRF21045SR3, MRF21045LSR3 2170 MHz, 45 W, 28 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
PFM21030 PFM21030F PFM21030SM |
2110-2170 MHz, 30W, 2-Stage Power Module Enhancement-Mode Lateral MOSFETs
|
List of Unclassifed Manufacturers ETC[ETC]
|
MRF5S21130R3 MRF5S21130SR3 |
2170 MHz, 28 W AVG., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
|
Freescale (Motorola)
|
MRF21090 MRF21090R3 MRF21090SR3 |
2170 MHz, 90 W, 28 V Lateral N–Channel RF Power MOSFET RF Power Field Effect Transistors
|
Freescale (Motorola) MOTOROLA[Motorola Inc] Motorola, Inc
|
BLD6G22L-50 BLD6G22LS-50 |
W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor
|
NXP Semiconductors
|
MAFR-000355-000001 |
Single Junction Drop-In Circulator 2110 MHz-2170 MHz
|
M/A-COM Technology Solutions, Inc.
|
MHL21336 |
2110 MHz - 2170 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
FREESCALE SEMICONDUCTOR INC
|
PTF210451E PTF210451F PTFA210451E |
Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2010 ?2025 MHz and 2110 ?2170 MHz
|
Infineon Technologies AG
|
SI-5R2.140G-T |
2110 MHz - 2170 MHz RF/MICROWAVE ISOLATOR
|
HITACHI METALS LTD
|
VLB2080 |
VCO, 2080 MHz - 2170 MHz
|
TEMEX COMPONENTS
|
PTF180101 PTF180101S |
LDMOS RF Power Field Effect Transistor 10 W 1805-1880 MHz 1930-1990 MHz 10 W 2110-2170 MHz LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz
|
INFINEON[Infineon Technologies AG]
|
MRF19045LSR3 MRF19045LR3 |
1990 MHz, 45 W, 26 V Lateral N-Channel RF Power MOSFET RF POWER FIELD EFFECT TRANSISTORS N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETS
|
Freescale (Motorola) MOTOROLA[Motorola, Inc] Motorola, Inc.
|