| PART |
Description |
Maker |
| MIE-556L3U MIE-546L3U 556L3U |
Infrared Emitting Diodes (UL Listed)
GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| TSHA520. TSHA5202 TSHA5201 TSHA5200 TSHA520 TSHA52 |
GaAlAs Infrared Emitting Diodes in ?5 mm (T-13/4) Package
GaAlAs Infrared Emitting Diodes in ?5 mm (T-13/4) Package
From old datasheet system
GaAlAs Infrared Emitting Diodes in 5 mm (T-13/4) Package
GaAlAs Infrared Emitting Diodes in ? 5 mm (T?1 3/4)Package
GaAlAs Infrared Emitting Diodes in 酶 5 mm (T-13/4) Package
GaAlAs Infrared Emitting Diodes in 5 mm (T-13/4) Package
|
VISAY[Vishay Siliconix]
TFUNK[Vishay Telefunken]
Vishay Intertechnology,Inc.
|
| TSML1000 TSML1040 TSML1020 TSML1030 |
Extented Power IR Emitting Diode in SMD Package
High Power Infrared Emitting Diode, 950 nm, GaAlAs/GaAs
|
VISAY[Vishay Siliconix]
|
| HE7601SG |
GaAlAs Infrared Emitting Diode
|
OPNEXT[Opnext. Inc.]
|
| SE1003-C |
GaAlAs on GaAs infrared emitting diode.
|
NEC Electronics
|
| LEXLTN2S0001 LNA4905L08 |
GaAlAs Infrared Light Emitting Diode
|
Panasonic Semiconductor
|
| LTE-2871 |
Gaalas T-1 3/4 Modified Infrared Emitting Diode
|
Lite-On Technology
|
| LTE-4206 |
GaAlAs T-1 Standard 3 Infrared Emitting Diode
|
Lite-On Technology
|
| LN77L |
GaAlAs Infrared Light Emitting Diode
|
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
| LTE-2871 |
GaAlAs T-1 3/4 Modified Infrared Emitting Diode
|
LITE-ON ELECTRONICS INC
光宝科技股份有限公司
Lite-On Technology Corporation
|
| MIE-536L3U MIE-526L3U |
GaAlAs T-1 3/4 PACKAGE INFRARED EMITTING DIODE
|
UOT[Unity Opto Technology]
|
| LN671 |
GaAlAs Infrared Light Emitting Diode
|
Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
|
