PART |
Description |
Maker |
BS62LV4000 |
Asynchronous 4M(512Kx8) bits Static RAM
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BSI
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UT9Q512 |
512K words by 8 bits high-performance CMOS asynchronous static RAM. 25ns acces time. 3V and 5V.
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Aeroflex Circuit Technology
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BS616LV1013 BS616LV1013EIP70 BS616LV1013AC BS616LV |
Very Low Power/Voltage CMOS SRAM 64K X 16 bit 非常低功电压CMOS SRAM4K的16 Asynchronous 1M(64Kx16) bits Static RAM
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Brilliance Semiconducto... BRILLIANCE SEMICONDUCTOR, Inc. BSI[Brilliance Semiconductor]
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IDT72T51333 IDT72T51353 IDT72T51343 |
2.5V MULTI-QUEUE FLOW-CONTROL DEVICES (4 QUEUES) 36 BIT WIDE CONFIGURATION 589,824 bits, 1,179,648 bits and 2,359,296 bits
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Integrated Device Technology, Inc.
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IDT72T51333L5BB IDT72T51353L6BBI IDT72T51333 IDT72 |
2.5V MULTI-QUEUE FLOW-CONTROL DEVICES (4 QUEUES) 36 BIT WIDE CONFIGURATION 589,824 bits, 1,179,648 bits and 2,359,296 bits
|
IDT[Integrated Device Technology]
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IDT72T51236L5BB IDT72T51236L5BBI IDT72T51256L6BBI |
2.5V MULTI-QUEUE FLOW-CONTROL DEVICES (4 QUEUES) 36 BIT WIDE CONFIGURATION 589,824 bits, 1,179,648 bits and 2,359,296 bits
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IDT[Integrated Device Technology]
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BS616LV1623 BS616LV1623TC BS616LV1623TC-55 BS616LV |
Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable Asynchronous 16M(2Mx8 or 1Mx16 Switchable) bits Static RAM
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Electronic Theatre Controls, Inc. List of Unclassifed Manufacturers BSI ETC[ETC] Brilliance Semiconductor
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BS616LV1622 BS616LV1622TIP70 BS616LV1622TC BS616LV |
Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable From old datasheet system Asynchronous 16M(2Mx8 or 1Mx16 Switchable) bits Static RAM
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BRILLIANCE SEMICONDUCTOR, INC. BSI[Brilliance Semiconductor]
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IDT7203L20J IDT7203L20JB IDT7204L20J IDT7204L20JB |
CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 CMOS ASYNCHRONOUS FIFO 2048 x 9 4096 x 9 8192 x 9 and 16384 x 9 RES,SMD,100,1%,0.063W,0603 High-speed double diode - Cd max.: 1.5 pF; Configuration: dual c.c. ; IF max: 215 mA; IFSM max: 4 A; IR max: 500@VR=80V nA; IFRM: 500 mA; trr max: 4 ns; VFmax: 1@IF=50mA mV; VR max: 80 V Schottky barrier diode - Cd max.: 100@VR=4V pF; Configuration: single ; IF: 1 A; IFSM max: 25 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V CMOS ASYNCHRONOUS FIFO 2048 x 9/ 4096 x 9/ 8192 x 9 and 16384 x 9 Trenchmos (tm) logic level FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.34 A; R<sub>DS(on)</sub>: 3900@10V5300@4.5V mOhm; V<sub>DS</sub>max: 60 V 异步FIFO的CMOS 2048 × 9096 × 9192 × 96384 × 9 INSERT, COAX FEMALE STRAIGHTINSERT, COAX FEMALE STRAIGHT; Impedance:50R; Coaxial cable type:RG174AU/RG188AU/RG316AU 16K X 9 OTHER FIFO, 50 ns, CDIP28 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 4K X 9 OTHER FIFO, 30 ns, CDIP28 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 异步FIFO的CMOS 2048 × 9096 × 9192 × 96384 × 9 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 16K X 9 OTHER FIFO, 50 ns, CQCC32 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 16K X 9 OTHER FIFO, 50 ns, PDIP28 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 16K X 9 OTHER FIFO, 50 ns, CDIP28 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 2K X 9 OTHER FIFO, 20 ns, PQCC32 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 8K X 9 OTHER FIFO, 50 ns, CDIP28 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 4K X 9 OTHER FIFO, 80 ns, CDIP28 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 4K X 9 OTHER FIFO, 80 ns, PDIP28 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 4K X 9 OTHER FIFO, 25 ns, CQCC32 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 8K X 9 OTHER FIFO, 20 ns, CDIP28 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 4K X 9 OTHER FIFO, 20 ns, CDIP28 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 8K X 9 OTHER FIFO, 50 ns, CQCC32 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 2K X 9 OTHER FIFO, 20 ns, CDIP28 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 2K X 9 OTHER FIFO, 20 ns, PDIP28 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 4K X 9 OTHER FIFO, 65 ns, PDIP28 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 4K X 9 OTHER FIFO, 65 ns, CDIP28 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 4K X 9 OTHER FIFO, 50 ns, CDIP28 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 2K X 9 OTHER FIFO, 50 ns, PQCC32 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 4K X 9 OTHER FIFO, 25 ns, PDIP28 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 4K X 9 OTHER FIFO, 50 ns, PQCC32 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 4K X 9 OTHER FIFO, 65 ns, CQCC32 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 2K X 9 OTHER FIFO, 65 ns, CQCC32 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 2K X 9 OTHER FIFO, 65 ns, PDIP28 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 2K X 9 OTHER FIFO, 80 ns, PDIP28 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 2K X 9 OTHER FIFO, 80 ns, CQCC32 CMOS ASYNCHRONOUS FIFO 2048 x 9, 4096 x 9, 8192 x 9 and 16384 x 9 2K X 9 OTHER FIFO, 80 ns, CDIP28
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IDT[Integrated Device Technology] Integrated Device Technology, Inc. Air Cost Control INTEGRATED DEVICE TECHNOLOGY INC Integrated Device Techn...
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EDD2516AKTA-5-E EDD2516AKTA-5C-E |
256M bits DDR SDRAM (16M words x16 bits, DDR400)
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Elpida Memory
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TC58FVB160FT-85 TC58FVT160FT-85 TC58FVB160FT-12 TC |
16-MBIT (2Mx8 BITS/1Mx16 BITS) CMOS FLASH MEMORY
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TOSHIBA
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