| PART |
Description |
Maker |
| IDT71V67702S80BQ IDT71V67702S80BGI8 IDT71V67702S80 |
3.3V 256K x 36 Synchronous 2.5V I/O Flowthrough SRAM
|
IDT
|
| GS820H32AQ-138I GS820H32AQ-6I GS820H32AQ-4I GS820H |
100MHz 12ns 64K x 32 2M synchronous burst SRAM
64K X 32 CACHE SRAM, 12 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 11 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 9.7 ns, PQFP100
117MHz 11ns 64K x 32 2M synchronous burst SRAM
66MHz 18ns 64K x 32 2M synchronous burst SRAM
150MHz 9ns 64K x 32 2M synchronous burst SRAM
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology, Inc.
|
| AS7C3364NTF32-36B.V1.0 AS7C3364NTF36B-80TQIN AS7C3 |
3.3V 64K x 32/36 Flowthrough Synchronous SRAM with NTD 64K X 36 ZBT SRAM, 8 ns, PQFP100
3.3V 64K x 32/36 Flowthrough Synchronous SRAM with NTD 64K X 32 ZBT SRAM, 8 ns, PQFP100
From old datasheet system
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| GS820E32T-66 GS820E32T-100 GS820E32Q-150 GS820E32Q |
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
150MHz 9ns 64K x 32 2M synchronous burst SRAM
64K X 32 CACHE SRAM, 11 ns, PQFP100
64K X 32 CACHE SRAM, 12 ns, PQFP100
64K X 32 CACHE SRAM, 10 ns, PQFP100
5.6UF/100VDC METAL POLY CAP 200万同步突发静态存储器
2M Synchronous Burst SRAM 200万同步突发静态存储器
Socket Adapter; For Use With:ATMEGA168-TQFP32, ATMEGA48-TQFP32, ATMEGA88-TQFP32, ATMEGA8L-TQFP32, ATMEGA8L(FAST)-TQFP32; Pitch Spacing:.8mm
64K x 32 / 2M Synchronous Burst SRAM
117MHz 11ns 64K x 32 2M synchronous burst SRAM
66MHz 18ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology
Electronic Theatre Controls, Inc.
List of Unclassifed Manufacturers
|
| GS820E32A GS820E32AQ-4 GS820E32AQ-6I GS820E32AT-6I |
66MHz 18ns 64K x 32 2M synchronous burst SRAM
117MHz 11ns 64K x 32 2M synchronous burst SRAM
64K x 32 / 2M Synchronous Burst SRAM
150MHz 9ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology
|
| AS7C251MNTF18A-85TQI AS7C251MNTF18A AS7C251MNTF18A |
2.5V 1M x 18 Flowthrough Synchronous SRAM with NTD 1M X 18 ZBT SRAM, 10 ns, PQFP100
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| GS820H32Q-5I GS820H32T-150I GS820H32GT-5I GS820H32 |
100MHz 12ns 64K x 32 2M synchronous burst SRAM
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 12 ns, PQFP100
64K x 32 2M Synchronous Burst SRAM 64K X 32 CACHE SRAM, 9 ns, PQFP100
117MHz 11ns 64K x 32 2M synchronous burst SRAM
138MHz 9.7ns 64K x 32 2M synchronous burst SRAM
|
GSI Technology, Inc.
|
| M36L0R7060T1 M36L0R7060B1 M36L0R7060B1ZAQE M36L0R7 |
128 Mbit (Multiple Bank, Multilevel, Burst) Flash memory and 64 Mbit (Burst) PSRAM, 1.8 V supply, multichip package
|
STMicroelectronics
ST Microelectronics, Inc.
|
| AS7C251MNTF32_36A AS7C251MNTF36A-85TQIN AS7C251MNT |
2.5V 1M x 32/36 Flowthrough SRAM with NTD 1M X 32 ZBT SRAM, 8.5 ns, PQFP100
2.5V 1M x 32/36 Flowthrough SRAM with NTD 1M X 32 ZBT SRAM, 10 ns, PQFP100
DIODE ZENER SINGLE 1000mW 30Vz 8.5mA-Izt 0.05 5uA-Ir 22.8Vr DO41-GLASS 5K/REEL
DIODE ZENER SINGLE 1000mW 20Vz 12.5mA-Izt 0.05 5uA-Ir 15.2Vr DO41-GLASS 5K/REEL
DIODE ZENER SINGLE 1000mW 43Vz 6mA-Izt 0.05 5uA-Ir 32.7Vr DO41-GLASS 5K/AMMO
NTD? Sync SRAM - 2.5V
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| CY7C1365V25 |
512K x 18 Flowthrough SRAM(512K x 18 流通式 SRAM) 直通为512k × 18的SRAM（为512k × 18流通式的SRAM
|
Cypress Semiconductor Corp.
|
| GS840FH18AT-10 GS840FH18AT-10I GS840FH18AT-12 GS84 |
10ns 256K x 18 4Mb sync burst SRAM
12ns 256K x 18 4Mb sync burst SRAM
8.5ns 256K x 18 4Mb sync burst SRAM
8ns 256K x 18 4Mb sync burst SRAM
10ns 128K x 32 4Mb sync burst SRAM
|
GSI Technology
|
| GS84032AB-100 GS84032AB-100I GS84032AB-150 GS84032 |
100MHz 12ns 128K x 32 4Mb sync burst SRAM
150MHz 10ns 128K x 32 4Mb sync burst SRAM
166MHz 8.5ns 128K x 32 4Mb sync burst SRAM
|
GSI Technology
|
