PART |
Description |
Maker |
HN28F101 HN28F101P-20 HN28F101T-15 HN28F101R-12 HN |
131072-word x 8-bit CMOS Flash Memory 131072-word 8-bit CMOS Flash Memory 131072字?8位CMOS闪存
|
List of Unclassifed Manufacturers Electronic Theatre Controls, Inc.
|
HM628128FP-10 HM628128FP-12 HM628128FP-7 HM628128F |
100ns; V(cc): -0.5 to 7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM 120ns; V(cc): -0.5 to 7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM
|
HITACHI[Hitachi Semiconductor]
|
M5M51008KR-70XI M5M51008KR-55XI M5M51008KR-70HI M5 |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
|
Mitsubishi Electric Corporation
|
M5M5V108DVP M5M5V108DFP M5M5V108DFP-70H M5M5V108DK |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM
|
RENESAS[Renesas Electronics Corporation]
|
M5M51008KR-10LL-I M5M51008KR-70LL M5M51008KR-55LL |
1048576-BIT(131072-WORD BY 8-BIT)CMOS STATIC RAM From old datasheet system
|
Mitsubishi
|
CXK581000AM CXK581000AM-10LL CXK581000AM-10SL CXK5 |
131072-word x 8-bit High Speed CMOS Static RAM
|
Sony Corporation
|
CXK5V81000ATM-10LLX CXK5V81000ATM-85LLX |
131072-word x 8-bit High Speed CMOS Static RAM
|
SONY
|
HN27C101G HN27C101AG-17 |
IC EPROM UV 1MBIT 128K x 8 170NS 32CDIP 131072 word x 8 Bit CMOS UV EPROM
|
Renesas Technology / Hitachi Semiconductor
|
M6MGD137W34DWG |
134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM
|
Renesas Electronics Corporation
|
M6MGD967W3 |
100,663,296-BIT (6,291,456-WORD BY 16-BIT) CMOS FLASH MEMORY &33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS Mobile RAM
|
RENESA
|
M5M4V4S40CTP-12 M5M4V4S40CTP-15 4MX16SDRAMTP |
4M (2-BANK x 131072-WORD x 16-BIT) Synchronous DRAM From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|