PART |
Description |
Maker |
W981216BH W981216 W981216BH-75 W981216BH-75I W9812 |
2M x 4 Banks x 16 Bit SDRAM Low Power SDRAM Industrial SDRAM 2M x 4 BANKS x 16 BIT SDRAM DRAM - Datasheet Reference
|
Winbond Electronics Corp WINBOND[Winbond]
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TC115501EMTTR TC115 TC115301ECT TC115301EMTTR TC11 |
The TC115 is a high-efficiency step-up DC/DC converter for small, low input voltage or battery powered sys-tems. This device has ... The TC115 is a high-efficiency step-up DC/DC converter for small, low input voltage or battery powered sys-tems. This device has a guaranteed start-up voltage of 0.9V and a typical supply current of 80 µA. Phase compensation and soft- PFM/PWM Step-Up DC/DC Converter
|
MICROCHIP[Microchip Technology]
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GM72V66841 GM72V66841ET GM72V66841ELT-75 GM72V6684 |
2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM From old datasheet system IC,SDRAM,4X2MX8,CMOS,TSOP,54PIN,PLASTIC x8 SDRAM x8 SDRAM内存
|
Hynix Semiconductor Inc. HYNIX[Hynix Semiconductor]
|
K4S643233F-SE K4S643233F-DE K4S643233F-SE_P75 K4S6 |
Dual Low-Noise Precision Rail-To-Rail Operational Amplifier 14-SOIC 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM From old datasheet system
|
SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
|
HYS64V8220GU HYS72V8220GU HYS72V4200GU HYSV4200GU |
3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module 3.3 4米64/72-Bit一银行内存模块3.3 8米64/72-Bit 2银行内存模块 3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module 8M X 64 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168 3.3V 4M x 64/72-Bit 1 BANK SDRAM Module 3.3V 8M x 64/72-Bit 2 BANK SDRAM Module 4M X 64 SYNCHRONOUS DRAM MODULE, 8 ns, DMA168 From old datasheet system
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
HB52RD648DC-B HB52RF648DC-B HB52RD648DC-B6BL HB52R |
512 MB Unbuffered SDRAM S.O.DIMM 64-Mword 64-bit, 133/100 MHz Memory Bus, 2-Bank Module (16 pcs of 32 M 8 components) PC133/100 SDRAM 512M; 100MHz LVTTL interface SDRAM 512M; 133MHz LVTTL interface SDRAM
|
Elpida Memory
|
HYS72V8000GU-10 HYS64V8000GU-10 HS648000 HYS64V800 |
3.3V 8M x 64-Bit SDRAM Module 3.3V 8M x 72-Bit SDRAM Module 8M X 72 SYNCHRONOUS DRAM MODULE, 7 ns, DMA168 From old datasheet system
|
SIEMENS AG Infineon SIEMENS[Siemens Semiconductor Group]
|
UPD4516161G5-A15-7JF UPD4516421G5-A15-7JF UPD45168 |
x4 SDRAM x8 SDRAM x16 SDRAM x16内存
|
Mitsubishi Electric, Corp.
|
NT256D64S8HA0G-8B NT256D64S8HA0G NT256D64S8HA0G-75 |
256Mb: 32Mx64 unbuffered DDR SDRAM module based 16Mx8 SDRAM 184pin Two Bank Unbuffered DDR SDRAM MODULE 184pin两个银行无缓冲DDR SDRAM内存模块
|
NANYA List of Unclassifed Manufacturers ETC[ETC] Electronic Theatre Controls, Inc.
|
VG3617161BT |
x16 CMOS SDRAM From old datasheet system
|
VSI
|
W986408BH W986408B2 |
2M x 16 bit x 4 Banks SDRAM From old datasheet system
|
Winbond
|
W986432AH-55 WINBONDELECTRONICSCORP-W986432AH-6 |
512K x 4 BANKS x 32 BITS SDRAM x32 SDRAM 2M X 32 SYNCHRONOUS DRAM, 5 ns, PDSO86
|
Winbond Electronics Corp Winbond Electronics, Corp.
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