| PART |
Description |
Maker |
| IDT70V9289L 70V9389_DS_62206 IDT70V9389L9PRFI IDT7 |
64K x 18 Synch, 3.3V Dual-Port RAM, PipeLined/Flow-Through
64K x 16 Sync, 3.3V Dual-Port Ram, PipeLined/Flow-Through
HIGH-SPEED 3.3V 64K x18/x16 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
From old datasheet system
|
IDT[Integrated Device Technology]
|
| IS61LP6B436A-166TQLBI IS61LP6436A IS61LP6436A-133T |
64K x 32, 64K x 36 SYNCHRONOUS PIPELINED STATIC RAM
|
天津新技术产业园区管理委员会
Integrated Silicon Solution, Inc
|
| MCM69P618C MCM69P618CTQ4 MCM69P618CTQ4.5 MCM69P618 |
64K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM
64K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM 64K X 18 CACHE SRAM, 4 ns, PQFP100
64K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM 64K X 18 CACHE SRAM, PQFP100
|
MOTOROLA[Motorola, Inc]
Motorola Mobility Holdings, Inc.
|
| CY7C1330 7C1330 |
64K x 32 Synchronous-Pipelined Cache RAM(64K x 32 同步流水线式高速缓冲存储器 RAM)
From old datasheet system
|
Cypress Semiconductor Corp.
|
| WCSS0232V1P-75AC WCSS0232V1P WCSS0232V1P-100AC WCS |
64K x 32 Synchronous-Pipelined Cache RAM
|
Weida Semiconductor, In...
WEIDA[Weida Semiconductor, Inc.]
|
| MCM63P636TQ200 MCM63P636TQ200R MCM63P636 MCM63P636 |
64K x 36 Bit Pipelined BurstRAM Synchronous Fast Static RAM
|
MOTOROLA[Motorola, Inc]
|
| CY7C1329-100AI CY7C132904 CY7C1329-100ACT CY7C1329 |
64K X 32 CACHE SRAM, 4.2 ns, PQFP100
64K X 32 CACHE SRAM, 5 ns, PQFP100
64K x 32 Synchronous-Pipelined Cache RAM
|
CYPRESS SEMICONDUCTOR CORP
|
| 709289L12PFG 709289L12PFGI 709289L12PFGI8 709289L1 |
HIGH-SPEED 64K x 16 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM
|
Integrated Device Techn...
|
| IDT71V2548S133PF IDT71V2548S133BGI IDT71V2548SA133 |
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 4.2 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 3.8 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 3.8 ns, PQFP100
25V N-Channel PowerTrench MOSFET; Package: TO-251(IPAK); No of Pins: 3; Container: Rail 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 5 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的36256 × 18 3.3同步ZBT SRAM2.5VI / O的脉冲计数器输出流水
128K x 36/ 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O/ Burst Counter Pipelined Outputs
3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/2.5V I/O
3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 2.5V I/O
|
Integrated Device Technology, Inc.
IDT
|
| IDT71V2558SA133BG IDT71V2558SA133BGI IDT71V2558SA1 |
3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 2.5V I/O
3.3V 256K x 18 ZBT Synchronous PipeLined SRAM w/2.5V I/O
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 3.2 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 256K X 18 ZBT SRAM, 5 ns, PBGA165
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K的3656 × 18 3.3同步ZBT SRAM.5VI / O的脉冲计数器输出流水
128K x 36, 256K x 18 3.3V Synchronous ZBT SRAMs 2.5V I/O, Burst Counter Pipelined Outputs 128K X 36 ZBT SRAM, 4.2 ns, PBGA165
SPLICE,TERM,BUTT,INSUL,UNION,16-22AWG
|
IDT
Integrated Device Technology, Inc.
|
| K7A203200B-QCI14 K7A203200B-QC14 K7A203600B-QCI14 |
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM 64Kx36
512Kx16 bit Low Power Full CMOS Static RAM
64Kx36 & 64Kx32-Bit Synchronous Pipelined Burst SRAM
64Kx36-Bit Synchronous Pipelined Burst SRAM
|
Cypress Semiconductor, Corp.
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
