| PART |
Description |
Maker |
| SPD50N06S2L-13 |
Low Voltage MOSFETs - DPAK; 50 A; 55V; LL; 12.7 mOhm
OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| SPD30N06S2L-13 |
Low Voltage MOSFETs - DPAK; 30 A; 55V; LL; 13mOhm
OptiMOS Power-Transistor
|
Infineon Technologies AG
|
| SPP80N10L SPB80N10L SPI80N10L |
Low Voltage MOSFETs - Power MOSFET, 100V, TO-220, RDSon=14mOhm, 80A, LL
Low Voltage MOSFETs - Power MOSFET, 100V, DPAK, RDSon=14mOhm, 80A, LL
Low Voltage MOSFETs - Power MOSFET, 100V, TO-262, RDSon=14mOhm, 80A, LL
SIPMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
| SPD50N03S2-07 |
OptiMOS Power-Transistor 的OptiMOS功率晶体
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, DPAK, RDSon = 7.3mOhm, 50A, NL
|
INFINEON[Infineon Technologies AG]
|
| SPD50N03S2L-06 |
OptiMOS Power-Transistor
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, DPAK, RDSon = 6.4mOhm, 50A, LL
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm
Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No
Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
Advanced Power Technology Ltd.
|
| KMB4D0N30SA |
Low Voltage MOSFETs
|
Korea Electronics (KEC)
|
| KMA3D6N20SA |
Low Voltage MOSFETs
|
Korea Electronics (KEC)
|
| SPP80N03S2L-04 SPB80N03S2L-04 SPI80N03S2L-04 |
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, TO-220, RDSon = 3.1mOhm, 80A, LL 80 A; 30V; LL; 4.2 mOhm
Low Voltage MOSFETs - OptiMOS Power MOSFET, 30V, D2PAK, RDSon = 3.9mOhm, 80A, LL
OptiMOS Power-Transistor
|
INFINEON[Infineon Technologies AG]
|
