PART |
Description |
Maker |
MJ13333_D ON1977 MJ13333 |
20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400-500 VOLTS 175 WATTS From old datasheet system 20 AMPERE NPN SILICON POWER TRANSISTORS 400-500 VOLTS 175 WATTS
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ON Semiconductor Motorola, Inc
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MJH16006 MJH16006A |
POWER TRANSISTORS 8 AMPERES 500 VOLTS 150 WATTS
|
http:// Motorola, Inc
|
MJW16206 ON2059 |
POWER TRANSISTORS 12 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-247AE High and Very High Resolution CRT Monitors From old datasheet system
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ON Semiconductor
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DDTD114GU-7-F DDTD133HU-7-F DDTD113EU DDTD113ZU DD |
Prebiased Transistors 500 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR 500 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR GREEN, PLASTIC PACKAGE-3 NPN PRE-BIASED 500 mA SURFACE MOUNT TRANSISTOR
|
Diodes, Inc. Diodes Incorporated Diodes Inc.
|
MTD1P50E |
TMOS POWER FET 1.0 AMPERES 500 VOLTS 15 OHM 1 A, 500 V, 15 ohm, P-CHANNEL, Si, POWER, MOSFET
|
Motorola, Inc
|
ZHL-5W-1 |
50High Power 5 to 500 MHz 50Ω High Power 5 to 500 MHz 50ヘ High Power 5 to 500 MHz
|
Mini-Circuits
|
SA20AG |
500 Watt Peak Power MiniMOSORB Zener Transient Voltage Suppressors 500 W, UNIDIRECTIONAL, SILICON, TVS DIODE
|
ON Semiconductor
|
IRF420-423 IRF421 IRF422 IRF423 IRF822 MTP2N45 IRF |
N-Channel Power MOSFETs, 3.0 A, 450 V/500 V N沟道功率MOSFET.0甲,450 V/500 V Circular Connector; Body Material:Plastic; Series:Trident TNM Series; Connector Shell Size:14; For Use With:Neptune Circular Connectors N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 V
|
Fairchild Semiconductor, Corp. Fairchild Semiconductor Corporation FAIRCHILD[Fairchild Semiconductor]
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IXFH24N50 IXFH26N50 IXFT26N50 IXFM24N50 IXFH26N50S |
26 A, 500 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD 2MM TERMINAL STRIPS HiPerFET Power MOSFETs 24 A, 500 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
|
IXYS[IXYS Corporation] IXYS, Corp.
|
MTV16N50E MTV16N50E_D ON2670 MTV16N50E-D TV16N50E |
16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
|
ETC Motorola, Inc ON Semiconductor
|
2SC5809 |
Shrink Tubing; Tubing Size Diameter:0.75"; Wall Thickness Recovered Nominal:0.065"; Inner Diameter Max Recovered:0.313"; Expanded Inner Diameter:0.750"; Material:Polyolefin 3 A, 500 V, NPN, Si, POWER TRANSISTOR, TO-220AB Power Device - Power Transistors - Swicthing
|
Panasonic, Corp.
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