| PART |
Description |
Maker |
| K7A803600M K7A801800M |
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM Data Sheet
256Kx36 & 512Kx18 Synchronous SRAM
|
Samsung Electronic
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K7A803601M K7A801801M K7A801809B K7A803609B |
256Kx36 & 512Kx18 Synchronous SRAM
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
256K x 36 & 512K x 18-Bit Synchronous Pipelined Burst SRAM Data Sheet
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K7P801811M K7P803611M |
256Kx36 & 512Kx18 Synchronous Pipelined SRAM Data Sheet
|
Samsung Electronic
|
| K7B803625B DSK7B803625B DS_K7B803625B K7B801825B K |
256Kx36 & 512Kx18-Bit Synchronous Pipelined Burst SRAM
256Kx36 & 512Kx18-Bit Synchronous Burst SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K7B803625M K7B801825M |
256Kx36 & 512Kx18 Synchronous SRAM
|
SAMSUNG[Samsung semiconductor]
|
| K7A801809B K7A803609B K7A803609B06 |
256Kx36 & 512Kx18 Synchronous SRAM
|
Samsung semiconductor
|
| K7A803600B06 |
256Kx36 & 512Kx18 Synchronous SRAM
|
Samsung semiconductor
|
| KM718V987 |
(KM736V887 / KM718V987) 256Kx36 & 512Kx18 Synchronous SRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| CY7C1380C-200AC CY7C1380C-200BGC CY7C1380C-167AC C |
Memory : Sync SRAMs
PUSHBUTTON, METAL, FLAT, 22MM 5A; Switch function type:NC/NO Mom; Voltage, contact AC max:250V; Temp, op. max:55(degree C); Temp, op. min:-20(degree C); Diameter, panel cut-out:22.2mm; Length / Height, external:32mm; Dielectric RoHS Compliant: Yes
18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.8 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 1M X 18 CACHE SRAM, 2.6 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PBGA165
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3 ns, PQFP100
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 2.8 ns, PQFP100
18-Mb (512K x 36/1M x 18) Pipelined SRAM 512K X 36 CACHE SRAM, 3.4 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| GS8322Z18B-166I GS8322Z18B-225 GS8322Z18B-225I GS8 |
166MHz 8.5ns 2M x 18 36Mb NBT pipelined/flow through SRAM
225MHz 6.5ns 2M x 18 36Mb NBT pipelined/flow through SRAM
133MHz 11ns 2M x 18 36Mb NBT pipelined/flow through SRAM
150MHz 10ns 2M x 18 36Mb NBT pipelined/flow through SRAM
200MHz 7.5ns 2M x 18 36Mb NBT pipelined/flow through SRAM
|
GSI Technology
|
| CY7C1352F CY7C1352F-100AC CY7C1352F-100AI CY7C1352 |
4-Mbit (256Kx18) Pipelined SRAM with NoBLArchitecture 256K X 18 ZBT SRAM, 2.8 ns, PQFP100
4-Mbit (256Kx18) Pipelined SRAM with NoBL(TM) Architecture
4-Mbit (256Kx18) Pipelined SRAM with NoBL Architecture
4-Mbit (256Kx18) Pipelined SRAM with NoBL⑩ Architecture
|
Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
CYPRESS[Cypress Semiconductor]
|
