| PART |
Description |
Maker |
| 2SB1115YK-T2 2SB1115YK-T2-AZ 2SB1115YK-T1-AZ 2SB11 |
1000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR POWER, MINIMOLD, SC-62, 3 PIN
1000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR POWER, MINIMOLD, SC-62, 3 PIN
|
Vishay Intertechnology, Inc.
|
| NESG250134-AZ NESG250134-EV09 NESG250134-T1-AZ |
NECs NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFIVATION (800mW) 3-PIN OWER MINIMOLD (34 PACKAGE) 邻舍npn型硅锗射频晶体管介质输出功率AMPLIFIVATION00mW的）3针奥尔MINIMOLD34包）
|
Duracell
California Eastern Laboratories, Inc.
|
| NESG220034 NESG220034-T1 |
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN POWER MINIMOLD (34 PKG)
|
Renesas Electronics Corporation
|
| 2SC3356 |
NPN Epitaxial Silicon RF Transistor for Microwave Low-Noise Amplification 3-pin Minimold
|
California Eastern Labs
|
| 2SC5787 2SC5787-T3 2SC5787NE894M13 |
Discrete
NPN SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW NOISE 3-PIN LEAD-LESS MINIMOLD
|
NEC
|
| 2SC4957 2SC4957-T1 |
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD
|
California Eastern Labs
|
| NESG2101M16-A NESG2101M16-T3 NESG2101M16-T3-A NESG |
L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR
NPN SiGe RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (125 mW) 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
|
NEC
|
| 2SC4703 2SC4703-T1 2SC4703-15 |
NPN EPITAXIAL SILICON RF TRANSISTOR FOR
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD
|
Renesas Electronics Corporation
|
| NESG220033 NESG220033-A NESG220033-T1B NESG220033- |
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)
|
NEC
|
