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LP0701N3 - P-Channel Enhancement-Mode Lateral MOSFET(击穿电压-16.5V,P沟道增强型横向MOS结构场效应管)

LP0701N3_269109.PDF Datasheet


 Full text search : P-Channel Enhancement-Mode Lateral MOSFET(击穿电压-16.5V,P沟道增强型横向MOS结构场效应管)
 Product Description search : P-Channel Enhancement-Mode Lateral MOSFET(击穿电压-16.5V,P沟道增强型横向MOS结构场效应管)


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