| PART |
Description |
Maker |
| MTE53N50E MTE53N50E_D ON2535 ON2534 |
From old datasheet system
TMOS POWER FET 53 AMPERES 500 VOLTS RDS(on) = 0.080 OHM 53 A, 500 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET
|
MOTOROLA[Motorola, Inc]
ON Semi
Motorola Mobility Holdings, Inc.
|
| MTD1P50E |
TMOS POWER FET 1.0 AMPERES 500 VOLTS 15 OHM 1 A, 500 V, 15 ohm, P-CHANNEL, Si, POWER, MOSFET
|
Motorola, Inc
|
| IRFF430 FN1894 |
2.75A, 500V, 1.500 Ohm, N-Channel Power MOSFET 2.75 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
2.75A/ 500V/ 1.500 Ohm/ N-Channel Power MOSFET
From old datasheet system
|
Intersil, Corp.
Intersil Corporation
|
| PSO0.5 |
RESISTOR, WIRE WOUND, 1.5 W, 5; 10; 20 %, 1000; 1500; 3000 ppm, 500 ohm - 500000000 ohm, CHASSIS MOUNT ROHS COMPLIANT
|
KOA Speer Electronics,Inc.
|
| S4111-46Q S4111-16Q S4111-16R S4114-46Q S4114-35Q |
MOSFET, Switching; VDSS (V): 500; ID (A): 19; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.325; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: 0.093; Package: TO-220FN
MOSFET, Switching; VDSS (V): 500; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.21; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 103; Package: TO-3P
Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR 硅光电二极管阵列16356元素硅的紫外到近红外光电二极管阵
|
Hamamatsu Photonics K.K.
|
| TYM-200-10 TYM-500-10 TYM-100K-10 TYM-100-10 TYM-2 |
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 200 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 500 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 100000 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 100 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 2000000 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 500000 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 1000000 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 20 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 200000 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 20000 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 50000 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 10000 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 5000 ohm
RESISTOR, TRIMMER, CERMET, 1 TURN(S), 0.5 W, 10 ohm
|
Vishay Intertechnology, Inc.
|
| PPF440J |
N Channel MOSFET; Package: TO-257; ID (A): 4.4; RDS(on) (Ohms): 0.85; PD (W): 60; BVDSS (V): 500; Rq: 2.1; 7 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AB
|
Microsemi, Corp.
|
| S3921 S3921-512Q S3921-128Q |
NMOS linear image sensor Voltage output type with current-integration readout circuit and impedance conversion circuit
MOSFET, Switching; VDSS (V): 500; ID (A): 12; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.515; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1100; toff (µs) typ: 0.077; Package: TO-220FN
|
Hamamatsu Photonics
|
| NSLC420 |
2.5 A, 500 V, 3.08 ohm, N-CHANNEL, Si, POWER, MOSFET
|
MICROSEMI CORP
|
| 2SK769 |
10 A, 500 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
PANASONIC CORP
|
| 2SK3200 |
10 A, 500 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET
|
SANKEN ELECTRIC CO LTD
|
|
