| PART |
Description |
Maker |
| AD534TE/883B AD534SE/883B |
Internally Trimmed Precision IC Multiplier
|
Analog Devices
|
| AD632BH AD632 |
Internally Trimmed Precision IC Multiplier
|
Analog Devices
|
| CS218I-50PBLEADFREE CS218I-50DLEADFREE CS218I-50PL |
50 A, 1200 V, SCR, TO-218
50 A, 400 V, SCR, TO-218
50 A, 1000 V, SCR, TO-218
50 A, 800 V, SCR, TO-218
50 A, 200 V, SCR, TO-218
Internally Trimmed Precision IC Multiplier 55 A, 400 V, SCR, TO-218
Internally Trimmed Precision IC Multiplier 55 A, 1000 V, SCR, TO-218
63 A, 1200 V, SCR, TO-65
63 A, 600 V, SCR, TO-65
63 A, 200 V, SCR, TO-65
110 A, SCR, TO-83
|
Central Semiconductor, Corp.
CENTRAL SEMICONDUCTOR CORP
|
| AD532SH883B AD532SD883B AD532SE883B |
Internally Trimmed Integrated Circuit Multiplier
|
Analog Devices
|
| OP12S |
Precision Low-Input Current Operational Amplifier (Internally Compensated) Aerospace Data Sheet (Rev F, 02/2008)
|
Analog Devices
|
| SP3842 |
Trimmed Oscillator Discharge Current for Precise Duty Cycle Control
|
TY Semiconductor Co., Ltd
|
| BTA16-600BW3G BTA16-800BW3G BTA16-600BW3 |
Triac, 3 Quadrant Internally Isolated, 50 mA I-GT, 16 A I-T(RMS)
Triacs Silicon Bidirectional Thyristors
600V 16 A, 50mA Igt 3 Quadrant Internally Isolated Triac
|
ON Semiconductor
|
| MGFS45V2325A |
2.3 - 2.5GHz BAND 32W INTERNALLY MATCHD GaAs FET 2.3 - 2.5GHz频带2W国内MATCHD砷化镓场效应
2.3-2.5 GHz BAND 32W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| CAT1023ZI-45T3 CAT1023ZD4I-45-GT2 CAT1023ZD4I-30-G |
Supervisory Circuits with I2C Serial 2k-bit CMOS EEPROM, Manual Reset and Watchdog Timer
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS
|
Catalyst Semiconductor
EEPROM
ON Semiconductor
NXP Semiconductors N.V.
|
| MGFC45V5053A C455053A |
5.05 - 5.25GHz BAND 32W INTERNALLY MATCHED GaAs FET
From old datasheet system
5.05~5.25GHz BAND 32W INTERNALLY MATCHD GaAs FET
5.05-5.25GHz BAND 32W INTERNALLY MATCHD GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| STGD5NB120SZT4 STGD5NB120SZ STGD5NB120SZ-1 |
N-CHANNEL 5A -1200V DPAK/IPAK INTERNALLY CLAMPED PowerMESH IGBT
40 个字x 1 线5 x 7 点阵字符和光
N-CHANNEL 5A - 1200V DPAK/IPAK INTERNALLY CLAMPED PowerMESH IGBT N沟道5A 1200伏的DPAK /像是iPak内部钳位PowerMESHIGBT
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
STMicroelectronics N.V.
|
