| PART |
Description |
Maker |
| SST29VE010-200-4I-NHE SST29EE010-70-4I-EHE |
1 Mbit (128K x8) Page-Write EEPROM 128K X 8 FLASH 5V PROM, 70 ns, PDSO32
|
Silicon Storage Technology, Inc.
|
| SST29VE020 SST29EE020 SST29EE020-150-4C-U2 SST29EF |
2 Mbit (256K x 8) page-mode EEPROM
x8EEPROM
2 Mbit (256K x8) Page-Mode EEPROM
|
SST[Silicon Storage Technology, Inc]
|
| UPD4265805G5-A50-7JD UPD4264805G5-A50-7JD UPD42658 |
18-Mbit QDR™-II SRAM 2-Word Burst Architecture
1-Mbit (64K x 16) Static RAM
1M x 4 Static RAM
x8 EDO Page Mode DRAM x8 EDO公司页面模式DRAM
4-Mbit (256K x 16) Static RAM
|
NEC TOKIN, Corp.
|
| SST29EE010A-90-4C-PH SST29LE010A-90-4C-PH SST29VE0 |
1 Megabit (128K x 8) Page Mode EEPROM
|
Silicon Storage Technology, Inc
|
| SST29EE010-150-3I-E SST29EE010-200-3I-E SST29EE010 |
1 Megabit (128K x 8) Page Mode EEPROM
|
Silicon Storage Technology, Inc.
|
| SST29VE010A SST29LE010A 29XE010A SST29EE010A-250-4 |
From old datasheet system
1 Megabit (128K x 8) Page Mode EEPROM
|
Silicon Storage Technology, Inc
SST
|
| IS41LV16100B-50T-TR IS41LV16100B-60T-TR IS41LV1610 |
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 50 ns, PDSO44
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 50 ns, PDSO42
1M x 16 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE 1M X 16 EDO DRAM, 60 ns, PDSO44
|
天津新技术产业园区管理委员会
Integrated Silicon Solution, Inc.
|
| MB82DP02183E-65L |
32 Mbit Mobile FCRAM 3.0 V, Page Mode
|
Fujitsu Component Limited.
Fujitsu Media Devices Limited
|
| UPD4265400G7-A50 UPD4265400G7-A60 UPD4265400G7-A70 |
x4 Fast Page Mode DRAM x4快速页面模式的DRAM
128K x 8 Static RAM
x4FastPageModeDRAM
|
|
| IS41C16100-50TE IS41C16100-50KE |
5V 1M x 16(16-MBIT) dynamic RAM with edo page mode
|
Integrated Silicon Solution Inc
|
| IS41LV44052 IS41LV44052-50JI IS41LV44052-60J IS41L |
4M x 4 (16-MBIT) DYNAMIC RAM WITH FAST PAGE MODE
|
ISSI[Integrated Silicon Solution, Inc]
|
| IS45LV44002B-50JLA1 IS45LV44002B-50JA1 IS45LV44002 |
4M x 4 (16-MBIT) DYNAMIC RAM WITH EDO PAGE MODE
|
ISSI[Integrated Silicon Solution, Inc]
|
