| PART |
Description |
Maker |
| M5M29GT160BVP-80 M5M29GB160BVP-80 |
16 /777 /216-BIT (2097 /152-WORD BY 8-BIT / 1048 /576-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT)CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY
|
Mitsubishi Electric Corporation
|
| HN27C4000G-10 HN27C4000G HN27C4000G-15 |
524288-Word 8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM 524288词？8-Bit/262144-Word x 16位的CMOS紫外线可擦除只读存储
524288-Word ?8-Bit/262144-Word X 16-Bit CMOS UV Erasable and Programmable ROM
|
Hitachi,Ltd.
Hitachi Semiconductor
|
| MSM534031E |
Replaced by OPA2694 : Dual Wideband, Low Power, Current Feedback Operational Amplifier 8-SOIC
524,288-Word x 8-Bit MASKROM
From old datasheet system
524288-Word x 8-Bit MASKROM
|
OKI SEMICONDUCTOR CO., LTD.
OKI[OKI electronic componets]
OKI electronic components
|
| M5M5T5636GP M5M5T5636GP-20 M5M5T5636GP-22 M5M5T563 |
MITSUBISHI LSIs 18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
|
Renesas Electronics Corporation
|
| M5M5W816WG-85LI M5M5W816WG-10H M5M5W816WG-10HI M5M |
8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
http://
|
| M5M5Y5636TG-20 M5M5Y5636TG-25 M5M5Y5636TG-22 |
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
|
Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
|
| M5M5Y5636TG-25 M5M5Y5636TG-22 |
18874368-BIT(524288-WORD BY 36-BIT) NETWORK SRAM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M5W816WG-85HI M5M5W816WG M5M5W816WG-55HI M5M5W81 |
Memory>Low Power SRAM
8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM
|
RENESAS[Renesas Electronics Corporation]
|
| M5M5408BFP M5M5408BRT M5M5408BTP M5M5408BRT-70H M5 |
Memory>Low Power SRAM
4194304-BIT (524288-WORD BY 8-BIT) CMOS STATIC RAM
|
Renesas Electronics Corporation
|
| MSM56V16160F |
2-Bank x 524288 Word x 16 Bit SYNCHRONOUS DYNAMIC RAM
|
OKI electronic componets
|
